18229640. Semiconductor structure and forming method thereof (United Microelectronics Corp.)
Contents
Semiconductor structure and forming method thereof
Organization Name
Inventor(s)
Chiu-Jung Chiu of Tainan City (TW)
Chung-Hsing Kuo of Taipei City (TW)
Chun-Ting Yeh of Taipei City (TW)
Chuan-Lan Lin of Chiayi City (TW)
Yu-Ping Wang of Hsinchu City (TW)
Yu-Chun Chen of Kaohsiung City (TW)
Semiconductor structure and forming method thereof
This abstract first appeared for US patent application 18229640 titled 'Semiconductor structure and forming method thereof
Original Abstract Submitted
The invention provides a semiconductor structure, which comprises a plurality of metal circuit layers stacked with each other, the multi-layer metal circuit layer comprises an aluminum circuit layer which is located at the position closest to a surface among the plurality of circuit layers, the material of the aluminum circuit layer is made of aluminum, and the aluminum circuit layer comprises a concave portion.
