18229296. SEMICONDUCTOR MEMORY DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)

SEMICONDUCTOR MEMORY DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME

Organization Name

SAMSUNG ELECTRONICS CO., LTD.

Inventor(s)

Sam Ki Kim of Suwon-si (KR)

Nam Bin Kim of Suwon-si (KR)

Ji Woong Kim of Suwon-si (KR)

Tae Hun Kim of Suwon-si (KR)

Ki Bong Moon of Suwon-si (KR)

Sae Rom Lee of Suwon-si (KR)

Sung-Bok Lee of Suwon-si (KR)

Jun Hee Lim of Suwon-si (KR)

Nag Yong Choi of Suwon-si (KR)

Sun Gyung Hwang of Suwon-si (KR)

SEMICONDUCTOR MEMORY DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 18229296 titled 'SEMICONDUCTOR MEMORY DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME

The semiconductor memory device described in the patent application includes a unique mold structure with gate electrodes and mold insulating layers stacked in a stair shape, channel structures intersecting the gate electrodes, and cell contacts connected to the gate electrodes.

• The device also features a first interlayer insulating layer covering the channel structures and cell contacts, along with first and second metal patterns connected to the channel structures and cell contacts respectively.
• A first blocking layer is present along the upper surface of the first interlayer insulating layer, the first metal patterns, and the second metal patterns.
• Additionally, the device includes first dummy vias passing through the first blocking layer.

Potential Applications: This technology can be applied in various semiconductor memory devices, improving their performance and efficiency.

Problems Solved: The innovation addresses the need for more compact and efficient semiconductor memory devices with improved functionality.

Benefits: The technology offers enhanced performance, increased efficiency, and potentially reduced manufacturing costs for semiconductor memory devices.

Commercial Applications: This innovation can be utilized in the production of advanced semiconductor memory devices for various electronic applications, potentially impacting the semiconductor industry.

Prior Art: There may be existing patents or technologies related to semiconductor memory devices with similar features, but this specific mold structure design may be a novel approach.

Frequently Updated Research: Stay updated on the latest advancements in semiconductor memory device technology to ensure competitiveness in the market.

Questions about Semiconductor Memory Device Technology:

Question 1: How does the unique mold structure in this semiconductor memory device improve its performance compared to traditional designs? Answer: The mold structure with gate electrodes and mold insulating layers stacked in a stair shape allows for more efficient operation and potentially higher memory density.

Question 2: What are the potential challenges in implementing this innovative design in mass production of semiconductor memory devices? Answer: Mass production of semiconductor devices with complex structures like the one described in the patent application may require advanced manufacturing processes and quality control measures to ensure consistency and reliability.

Original Abstract Submitted

A semiconductor memory device including a substrate; a mold structure including gate electrodes and mold insulating layers stacked in a stair shape, channel structures on the substrate, intersecting the gate electrodes, and passing through the mold structure; cell contacts connected to the gate electrodes; a first interlayer insulating layer on the mold structure and covering the channel structures and cell contacts; first metal patterns connected to the channel structures, an upper surface of the first metal patterns being coplanar with an upper surface of the first interlayer insulating layer; second metal patterns connected to the cell contacts, an upper surface of the second metal patterns being coplanar with the upper surface of the first metal patterns; a first blocking layer along the upper surface of the first interlayer insulating layer, the first metal patterns, and the second metal patterns; and a first dummy vias passing through the first blocking layer.