18228220. METHOD OF MANUFACTURING INTEGRATED CIRCUIT DEVICE simplified abstract (Samsung Electronics Co., Ltd.)

METHOD OF MANUFACTURING INTEGRATED CIRCUIT DEVICE

Organization Name

Samsung Electronics Co., Ltd.

Inventor(s)

Younghun Sung of Suwon-si (KR)

Sunhye Hwang of Suwon-si (KR)

Sangho Rha of Suwon-si (KR)

Seungjae Sim of Suwon-si (KR)

Younseok Choi of Suwon-si (KR)

Byungkeun Hwang of Suwon-si (KR)

Youn Joung Cho of Suwon-si (KR)

METHOD OF MANUFACTURING INTEGRATED CIRCUIT DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18228220 titled 'METHOD OF MANUFACTURING INTEGRATED CIRCUIT DEVICE

The abstract describes a method of manufacturing an integrated circuit device by forming a doped silicon oxide film on a substrate, creating a vertical hole in the film, and forming a vertical structure in the hole.

• Doped silicon oxide film is formed on a substrate by supplying a silicon precursor, an oxidant, and at least two dopant sources with different dopant elements.
• Vertical hole is created in the doped silicon oxide film through dry-etching.
• Vertical structure is formed in the vertical hole using a silicon precursor containing specific compounds and functional groups.

Potential Applications: - Semiconductor manufacturing - Electronics industry - Nanotechnology research

Problems Solved: - Enhancing the performance of integrated circuit devices - Improving the efficiency of semiconductor manufacturing processes

Benefits: - Increased functionality of integrated circuits - Enhanced precision in device fabrication - Potential cost savings in manufacturing

Commercial Applications: Title: Advanced Semiconductor Manufacturing Process for Integrated Circuits This technology could revolutionize the semiconductor industry by improving the production process of integrated circuit devices, leading to more advanced and efficient electronic products.

Prior Art: Researchers can explore prior patents related to semiconductor manufacturing processes, doped silicon oxide films, and vertical structure formation in integrated circuit devices.

Frequently Updated Research: Researchers are constantly exploring new materials and methods to enhance the performance and efficiency of integrated circuit devices. Stay updated on the latest advancements in semiconductor manufacturing technologies.

Questions about the technology: 1. How does the use of different dopant elements in the doped silicon oxide film impact the performance of the integrated circuit device? 2. What are the specific advantages of forming a vertical structure in the vertical hole of the doped silicon oxide film?

Original Abstract Submitted

A method of manufacturing an integrated circuit device, the method including forming a doped silicon oxide film on a substrate by supplying, onto the substrate, a silicon precursor, an oxidant, and at least two dopant sources including dopant elements that are different from each other such that the doped silicon oxide film includes at least two dopant elements; forming a vertical hole in the doped silicon oxide film by dry-etching the doped silicon oxide film; and forming a vertical structure in the vertical hole, wherein the silicon precursor includes a monosilane compound, a disilane compound, a siloxane compound, or a combination thereof, and the silicon precursor includes a Si—H functional group, and a C1-C10 oxy group or a C1-C10 organoamino group.