18227299. Semiconductor structure (United Microelectronics Corp.)
Semiconductor structure
Organization Name
Inventor(s)
Hung-Chun Lee of Pingtung County (TW)
Chih-Yi Wang of Tainan City (TW)
Wei-Che Chen of Kaohsiung City (TW)
Ya-Ting Hu of Kaohsiung City (TW)
Yao-Jhan Wang of Tainan City (TW)
Kun-Szu Tseng of Tainan City (TW)
Feng-Yun Cheng of Kaohsiung City (TW)
Shyan-Liang Chou of Tainan City (TW)
Semiconductor structure
This abstract first appeared for US patent application 18227299 titled 'Semiconductor structure
Original Abstract Submitted
The invention provides a semiconductor structure, which comprises a middle/high voltage device region and a low voltage device region, a plurality of fin structures disposed in the low voltage device region, and a protruding part located at a boundary Between the middle/high voltage device region and the low voltage device region. A top surface of the protruding part is flat, and the top surface of the protruding part is aligned with a flat top surface of the middle/high voltage device region.
- United Microelectronics Corp.
- Hung-Chun Lee of Pingtung County (TW)
- Chih-Yi Wang of Tainan City (TW)
- Wei-Che Chen of Kaohsiung City (TW)
- Ya-Ting Hu of Kaohsiung City (TW)
- Yao-Jhan Wang of Tainan City (TW)
- Kun-Szu Tseng of Tainan City (TW)
- Feng-Yun Cheng of Kaohsiung City (TW)
- Shyan-Liang Chou of Tainan City (TW)
- H01L29/78
- H01L25/16
- CPC H01L29/7851