18227064. SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)

SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

Organization Name

SAMSUNG ELECTRONICS CO., LTD.

Inventor(s)

Jinbum Kim of Suwon-si (KR)

Gyeom Kim of Suwon-si (KR)

Youngkwang Kim of Suwon-si (KR)

Chanyoung Kim of Suwon-si (KR)

Jangwoo Park of Suwon-si (KR)

Sangmoon Lee of Suwon-si (KR)

Sujin Jung of Suwon-si (KR)

SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 18227064 titled 'SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

The semiconductor device described in the abstract consists of a substrate containing both a p-type metal-oxide-semiconductor (MOS) field-effect transistor (FET) region and an n-type MOSFET region. It also includes active patterns, channel patterns, source/drain patterns, and gate electrodes on the active patterns.

• The device features a PMOSFET region and an NMOSFET region on the substrate.
• Active patterns are present on both regions, with channel patterns and source/drain patterns connected to them.
• Gate electrodes are placed on the channel patterns of both the PMOSFET and NMOSFET regions.

Potential Applications: - This technology can be used in the manufacturing of integrated circuits for various electronic devices. - It can be applied in the development of advanced semiconductor devices for high-performance computing.

Problems Solved: - The device addresses the need for efficient and reliable semiconductor components in modern electronics. - It provides a solution for enhancing the performance of MOSFET transistors in integrated circuits.

Benefits: - Improved functionality and performance of semiconductor devices. - Enhanced efficiency and reliability in electronic systems.

Commercial Applications: Title: Advanced Semiconductor Device Technology for Integrated Circuits This technology can be utilized in the production of high-speed processors, memory chips, and other electronic components for consumer electronics, telecommunications, and computing industries. The market implications include increased demand for faster and more reliable semiconductor devices in various applications.

Questions about Semiconductor Device Technology: 1. How does this technology impact the efficiency of integrated circuits? - The technology enhances the efficiency of integrated circuits by improving the performance of MOSFET transistors, leading to faster and more reliable electronic devices.

2. What are the potential future advancements in semiconductor device technology? - Future advancements may focus on increasing the integration density, reducing power consumption, and enhancing the speed of semiconductor devices through innovative design and materials.

Original Abstract Submitted

A semiconductor device includes a substrate including a p-type metal-oxide-semiconductor (MOS) field-effect transistor (FET) (PMOSFET) region and an n-type MOSFET (NMOSFET) region, a first active pattern on the PMOSFET region, a second active pattern on the NMOSFET region, a first channel pattern and a first source/drain pattern on the first active pattern, the first channel pattern connected to the first source/drain pattern, a second channel pattern and a second source/drain pattern provided on the second active pattern, the second channel pattern connected to the second source/drain pattern, and a gate electrode on the first channel pattern and the second channel pattern.