18226694. ANTIFERROELECTRIC CONTAINING DYSPROSIUM AND A MANUFACTURING METHOD THEREOF simplified abstract (Kia Corporation)
Contents
- 1 ANTIFERROELECTRIC CONTAINING DYSPROSIUM AND A MANUFACTURING METHOD THEREOF
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 ANTIFERROELECTRIC CONTAINING DYSPROSIUM AND A MANUFACTURING METHOD THEREOF - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
ANTIFERROELECTRIC CONTAINING DYSPROSIUM AND A MANUFACTURING METHOD THEREOF
Organization Name
Inventor(s)
Hyung Suk Kim of Gwangmyeong-si (KR)
Hyo Soon Shin of Jinju-si (KR)
Jeoung Sik Choi of Changwon-si (KR)
ANTIFERROELECTRIC CONTAINING DYSPROSIUM AND A MANUFACTURING METHOD THEREOF - A simplified explanation of the abstract
This abstract first appeared for US patent application 18226694 titled 'ANTIFERROELECTRIC CONTAINING DYSPROSIUM AND A MANUFACTURING METHOD THEREOF
Simplified Explanation
The abstract describes an antiferroelectric with a PbLa([ZrSn]Ti) composition that exhibits high permittivity and breakdown voltage, manufactured through appropriate mixing and dysprosium addition.
- Antiferroelectric with PbLa([ZrSn]Ti) composition
- High permittivity and breakdown voltage
- Manufactured through mixing and dysprosium addition
Potential Applications
The antiferroelectric material could be used in:
- Capacitors
- Sensors
- Actuators
Problems Solved
This technology addresses the following issues:
- Low permittivity in materials
- Low breakdown voltage in materials
Benefits
The benefits of this technology include:
- Improved performance in electronic devices
- Enhanced reliability
- Increased efficiency
Potential Commercial Applications
The antiferroelectric material could find applications in:
- Electronics industry
- Energy storage devices
- Medical devices
Possible Prior Art
Prior art may include:
- Antiferroelectric materials with different compositions
- Methods for manufacturing high permittivity materials
Unanswered Questions
How does the dysprosium addition affect the properties of the antiferroelectric material?
The dysprosium addition is mentioned in the abstract as part of the manufacturing process, but the specific impact on the properties of the material is not detailed. Further research or experimentation may be needed to understand this relationship.
Are there any limitations or drawbacks to using the PbLa([ZrSn]Ti) composition in antiferroelectric materials?
While the abstract highlights the benefits of the PbLa([ZrSn]Ti) composition, it does not mention any potential limitations or drawbacks. Investigating any challenges associated with this composition could provide a more comprehensive understanding of its suitability for various applications.
Original Abstract Submitted
An antiferroelectric and a method for manufacturing an antiferroelectric are disclosed herein. The antiferroelectric may have high permittivity and breakdown voltage by having a PbLa([ZrSn]Ti) composition. The manufacturing of the antiferroelectric may be performed through appropriate mixing and dysprosium addition.
