18225777. SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
Contents
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
Organization Name
Inventor(s)
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18225777 titled 'SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
Simplified Explanation
The semiconductor device described in the abstract includes various components such as an active pattern, a channel pattern, a source/drain pattern, a gate electrode, an active contact, an upper contact, a lower power interconnection line, and a power delivery network layer. The lower power interconnection line is connected to the upper contact, and the lower portion of the upper contact protrudes into the connection portion.
- Active pattern, channel pattern, and source/drain pattern on the substrate
- Gate electrode on the channel pattern
- Active contact on the source/drain pattern
- Upper contact adjacent to the active contact
- Lower power interconnection line buried in the substrate
- Power delivery network layer on the bottom surface of the substrate
- Potential Applications
- This technology could be used in the development of advanced semiconductor devices for various electronic applications such as mobile devices, computers, and automotive systems.
- Problems Solved
- This technology helps in improving the performance and efficiency of semiconductor devices by optimizing the power delivery network and interconnection lines.
- Benefits
- Enhanced performance and efficiency of semiconductor devices - Improved power delivery and interconnection capabilities - Potential for smaller and more compact electronic devices
- Potential Commercial Applications
- Optimizing Power Delivery in Semiconductor Devices
- Potential Commercial Applications
- Possible Prior Art
- Prior art related to optimizing power delivery networks and interconnection lines in semiconductor devices.
- Unanswered Questions
- How does this technology compare to existing power delivery network solutions in semiconductor devices?
- Answer: This technology offers improved power delivery capabilities and optimized interconnection lines compared to existing solutions, leading to enhanced performance and efficiency.
- What impact could this technology have on the overall cost of manufacturing semiconductor devices?
- Answer: This technology could potentially increase the cost-effectiveness of manufacturing semiconductor devices by improving their performance and efficiency, leading to higher quality products.
Original Abstract Submitted
A semiconductor device comprising a substrate including an active pattern, a channel pattern and a source/drain pattern that are on the active pattern, the source/drain pattern connected to the channel pattern, a gate electrode on the channel pattern, an active contact on the source/drain pattern, an upper contact being adjacent to the active contact and extending into the substrate, a lower power interconnection line buried in the substrate, and a power delivery network layer on a bottom surface of the substrate, wherein the lower power interconnection line includes a connection portion connected to the upper contact, and a lower portion of the upper contact protrudes into the connection portion.
