18224396. ALPHA GALLIUM OXIDE THIN-FILM STRUCTURE HAVING HIGH CONDUCTIVITY OBTAINED USING SELECTIVE AREA GROWTH IN HVPE GROWTH MANNER AND METHOD FOR MANUFACTURING THE SAME simplified abstract (ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE)
Contents
- 1 ALPHA GALLIUM OXIDE THIN-FILM STRUCTURE HAVING HIGH CONDUCTIVITY OBTAINED USING SELECTIVE AREA GROWTH IN HVPE GROWTH MANNER AND METHOD FOR MANUFACTURING THE SAME
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 ALPHA GALLIUM OXIDE THIN-FILM STRUCTURE HAVING HIGH CONDUCTIVITY OBTAINED USING SELECTIVE AREA GROWTH IN HVPE GROWTH MANNER AND METHOD FOR MANUFACTURING THE SAME - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
ALPHA GALLIUM OXIDE THIN-FILM STRUCTURE HAVING HIGH CONDUCTIVITY OBTAINED USING SELECTIVE AREA GROWTH IN HVPE GROWTH MANNER AND METHOD FOR MANUFACTURING THE SAME
Organization Name
ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
Inventor(s)
Ji-Hyeon Park of Gunsan-si (KR)
Jae-Kyoung Mun of Daejeon (KR)
ALPHA GALLIUM OXIDE THIN-FILM STRUCTURE HAVING HIGH CONDUCTIVITY OBTAINED USING SELECTIVE AREA GROWTH IN HVPE GROWTH MANNER AND METHOD FOR MANUFACTURING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18224396 titled 'ALPHA GALLIUM OXIDE THIN-FILM STRUCTURE HAVING HIGH CONDUCTIVITY OBTAINED USING SELECTIVE AREA GROWTH IN HVPE GROWTH MANNER AND METHOD FOR MANUFACTURING THE SAME
Simplified Explanation
The patent application describes a method for manufacturing an alpha gallium oxide thin-film structure with high conductivity using selective area growth in a HVPE growth manner. This involves forming a nitride-based nitride film pattern on the alpha gallium oxide thin-film to expose only a selected area, and then performing re-growth only on the partially exposed area to create a patterned alpha gallium oxide re-growth pattern.
- Selective area growth in a HVPE growth manner
- Formation of a nitride-based nitride film pattern on alpha gallium oxide thin-film
- Re-growth performed only on partially exposed area
- Creation of high-quality patterned alpha gallium oxide re-growth pattern
Potential Applications
The technology could be applied in the manufacturing of high-conductivity electronic devices, sensors, and optoelectronic devices.
Problems Solved
1. Improved conductivity in alpha gallium oxide thin-film structures 2. Precise patterning of alpha gallium oxide thin-films
Benefits
1. Enhanced performance of electronic devices 2. Increased efficiency of sensors and optoelectronic devices
Potential Commercial Applications
Optimizing Alpha Gallium Oxide Thin-Film Structures for High-Conductivity Electronic Devices
Possible Prior Art
No prior art information is available at this time.
Unanswered Questions
How does this method compare to traditional methods of thin-film structure manufacturing?
The article does not provide a direct comparison to traditional methods, leaving the reader to wonder about the advantages and disadvantages of this new approach.
What specific industries could benefit the most from this technology?
While some potential applications are mentioned, a more detailed analysis of the industries that could benefit the most from this technology is not provided.
Original Abstract Submitted
Disclosed are an alpha gallium oxide thin-film structure having high conductivity obtained using selective area growth in a HVPE growth manner, and a method for manufacturing the same, in which a nitride-based nitride film pattern is formed on an alpha gallium oxide thin-film so as to expose only a selected area thereof, and re-growth is performed only on the partially exposed area thereof, thereby forming a high-quality patterned alpha gallium oxide re-growth pattern.
