18223933. VARYING MEMORY ERASE DEPTH ACCORDING TO BLOCK CHARACTERISTICS simplified abstract (Micron Technology, Inc.)
VARYING MEMORY ERASE DEPTH ACCORDING TO BLOCK CHARACTERISTICS
Organization Name
Inventor(s)
Sriteja Yamparala of Boise ID (US)
Tawalin Opastrakoon of Boise ID (US)
VARYING MEMORY ERASE DEPTH ACCORDING TO BLOCK CHARACTERISTICS - A simplified explanation of the abstract
This abstract first appeared for US patent application 18223933 titled 'VARYING MEMORY ERASE DEPTH ACCORDING TO BLOCK CHARACTERISTICS
Simplified Explanation
The method described in the patent application involves identifying available memory blocks for garbage collection, determining erase depth levels for each block based on block characteristics, erasing the blocks according to their respective erase depth levels, and selecting a block for data writing based on the erase depth level.
- Candidate memory blocks are identified for garbage collection.
- Erase depth levels are determined for each block based on block characteristics.
- Blocks are erased according to their erase depth levels.
- A block is selected for data writing based on its erase depth level.
- Block characteristics can include program erase count and temperature.
Potential Applications
- Solid-state drives
- Flash memory devices
Problems Solved
- Efficient garbage collection in memory systems
- Improved performance and longevity of memory blocks
Benefits
- Optimized memory management
- Enhanced data writing efficiency
- Prolonged lifespan of memory blocks
Original Abstract Submitted
A method can include identifying one or more candidate memory blocks that are available for garbage collection, determining a respective erase depth level for each candidate memory block based on one or more block characteristics of the candidate memory block, erasing the candidate memory blocks, wherein each of the candidate memory blocks is erased in accordance with the respective erase depth level determined for the candidate memory block, receiving a request to write data subsequent to erasing the candidate memory blocks, and, responsive to receiving the request to write data, selecting a first memory block from the erased candidate memory blocks in accordance with the respective erase depth level of each of the erased candidate memory blocks. The block characteristics of the candidate memory block can include a program erase count and/or a temperature of the candidate memory block.
