18223783. NONVOLATILE MEMORY DEVICE AND OPEATION METHOD THEREOF simplified abstract (Samsung Electronics Co., Ltd.)

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NONVOLATILE MEMORY DEVICE AND OPEATION METHOD THEREOF

Organization Name

Samsung Electronics Co., Ltd.

Inventor(s)

Su Chang Jeon of Suwon-si (KR)

Woohyun Kang of Suwon-si (KR)

Seungkyung Ro of Suwon-si (KR)

Sangkwon Moon of Suwon-si (KR)

Heewon Lee of Suwon-si (KR)

NONVOLATILE MEMORY DEVICE AND OPEATION METHOD THEREOF - A simplified explanation of the abstract

This abstract first appeared for US patent application 18223783 titled 'NONVOLATILE MEMORY DEVICE AND OPEATION METHOD THEREOF

Simplified Explanation

The patent application describes a nonvolatile memory device with temperature compensation capabilities to improve read accuracy and performance.

  • Memory cell array with multiple memory cells connected to word lines
  • Address decoder controls selected word line based on received address
  • First temperature sensor for measuring program temperature
  • Second temperature sensor for measuring read temperature of memory cells
  • Temperature compensation circuit calculates read level offset based on temperatures
  • Compensation read voltage generated based on read level offset
  • Address decoder provides compensation read voltage to selected word line

Potential Applications

The technology can be applied in various electronic devices requiring nonvolatile memory, such as smartphones, tablets, laptops, and IoT devices.

Problems Solved

This technology addresses the issue of read accuracy in nonvolatile memory devices caused by temperature variations, ensuring reliable data storage and retrieval.

Benefits

- Improved read accuracy in nonvolatile memory devices - Enhanced performance and reliability in various electronic devices - Efficient temperature compensation for better data storage

Potential Commercial Applications

"Temperature-Compensated Nonvolatile Memory Device" can be used in consumer electronics, industrial applications, automotive systems, and medical devices for reliable data storage and retrieval.

Possible Prior Art

One possible prior art could be the use of temperature sensors in memory devices for temperature compensation. However, the specific implementation described in this patent application may be novel and inventive in its approach.

Unanswered Questions

How does the temperature compensation circuit calculate the read level offset?

The temperature compensation circuit calculates the read level offset based on the read temperature and program temperature of the memory cells. This process involves complex algorithms and calculations to ensure accurate compensation for temperature variations.

What is the impact of temperature variations on nonvolatile memory devices without temperature compensation?

Without temperature compensation, temperature variations can lead to read errors, data corruption, and reduced reliability in nonvolatile memory devices. This can result in data loss and system failures in electronic devices.


Original Abstract Submitted

Disclosed is a nonvolatile memory device which include a memory cell array including a plurality of memory cells connected to a plurality of word lines, an address decoder that controls a selected word line among the plurality of word lines based on an address received from an external device including a first temperature sensor, a second temperature sensor that measures a read temperature of first memory cells connected to the selected word line from among the plurality of memory cells, and a temperature compensation circuit that calculates a read level offset based on the read temperature and a program temperature of the first memory cells measured by the first temperature sensor and generates a compensation read voltage based on the read level offset. The address decoder is further configured to provide the compensation read voltage to the selected word line.