18222897. INTEGRATED SOLUTION WITH LOW TEMPERATURE DRY DEVELOP FOR EUV PHOTORESIST simplified abstract (Applied Materials, Inc.)

INTEGRATED SOLUTION WITH LOW TEMPERATURE DRY DEVELOP FOR EUV PHOTORESIST

Organization Name

Applied Materials, Inc.

Inventor(s)

Tzu Shun Yang of Milpitas CA (US)

Zhenxing Han of Sunnyvale CA (US)

Madhur Sachan of Belmont CA (US)

Lequn Liu of San Jose CA (US)

Nasrin Kazem of Santa Clara CA (US)

Lakmal Charidu Kalutarage of San Jose CA (US)

Mark Joseph Saly of Milpitas CA (US)

INTEGRATED SOLUTION WITH LOW TEMPERATURE DRY DEVELOP FOR EUV PHOTORESIST - A simplified explanation of the abstract

This abstract first appeared for US patent application 18222897 titled 'INTEGRATED SOLUTION WITH LOW TEMPERATURE DRY DEVELOP FOR EUV PHOTORESIST

Simplified Explanation

The abstract describes a method for developing a photopatterned metal oxo photoresist, involving pre-treatment, thermal dry development, and post-treatment processes.

• The method includes pre-treating the photopatterned metal oxo photoresist with a pre-treatment process.
• The photopatterned metal oxo photoresist is then developed using a thermal dry develop process to selectively remove a portion of the resist and form a resist mask.
• The thermal dry develop process consists of a first sub-operation and a second sub-operation that differs from the first.
• The process concludes with post-treating the resist mask with a post-treatment process.

Potential Applications

This technology could be applied in the semiconductor industry for photolithography processes.

Problems Solved

This method solves the problem of selectively removing portions of a photopatterned metal oxo photoresist to form a resist mask.

Benefits

The benefits of this technology include improved precision and control in developing photopatterned metal oxo photoresists.

Potential Commercial Applications

A potential commercial application of this technology could be in the production of advanced electronic devices.

Possible Prior Art

One possible prior art could be the use of traditional wet development processes for developing photoresists.

How does this method compare to traditional wet development processes for photoresists?

This article does not provide a direct comparison between the described method and traditional wet development processes.

What specific types of metal oxo photoresists are most suitable for this method?

The article does not specify the types of metal oxo photoresists that are most compatible with this method.

Original Abstract Submitted

Embodiments disclosed herein may include a method for developing a photopatterned metal oxo photoresist. In an embodiment, the method may include pre-treating the photopatterned metal oxo photoresist with a pre-treatment process, developing the photopatterned metal oxo photoresist with a thermal dry develop process to selectively remove a portion of the photopatterned metal oxo photoresist and form a resist mask. In an embodiment, the thermal dry develop process includes a first sub-operation, and a second sub-operation that is different than the first sub-operation. In an embodiment, the process further includes post-treating the resist mask with a post-treatment process.