18222223. NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
Contents
NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE
Organization Name
Inventor(s)
Youngjin Choi of Suwon-si (KR)
NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18222223 titled 'NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE
Simplified Explanation
The abstract describes a patent application for a nitride semiconductor light emitting device. Here is a simplified explanation of the abstract:
- The device consists of layers of different types of nitride semiconductors, including P-type and N-type layers.
- Between the N-type layer and the active layer, there is a first strain reducing layer made up of alternating first InGaN films and first GaN films.
- Another strain reducing layer, called the second strain reducing layer, is stacked between the first strain reducing layer and the active layer. It consists of alternating second InGaN films and second GaN films.
- The active layer contains an InGaN well layer, a barrier layer, and an AlGaN layer. An intermediate lattice layer is present between the InGaN well layer and the AlGaN layer.
- The intermediate lattice layer is made of a nitride single crystal with a lattice larger than the InGaN well layer and smaller than the AlGaN layer.
Potential applications of this technology:
- LED lighting: The nitride semiconductor light emitting device can be used in LED lighting applications, providing efficient and high-quality lighting solutions.
- Display technology: The device can be utilized in display panels, such as LED screens, to produce vibrant and energy-efficient displays.
- Optical communication: The technology can be applied in optical communication systems, enabling faster and more reliable data transmission.
Problems solved by this technology:
- Strain reduction: The strain reducing layers help to reduce the strain between different semiconductor layers, improving the overall performance and reliability of the device.
- Lattice matching: The intermediate lattice layer allows for better lattice matching between the InGaN well layer and the AlGaN layer, reducing defects and enhancing the device's efficiency.
Benefits of this technology:
- Improved efficiency: The optimized layer structure and lattice matching contribute to higher efficiency in light emission, resulting in brighter and more energy-efficient devices.
- Enhanced reliability: The strain reducing layers help to minimize strain-induced defects, increasing the device's lifespan and reliability.
- Versatile applications: The technology can be applied in various fields, including lighting, displays, and optical communication, offering a wide range of potential applications.
Original Abstract Submitted
A nitride semiconductor light emitting device includes an active layer provided between P-type and N-type nitride semiconductor layers, a first strain reducing layer including first InGaN films and first GaN films alternately stacked between the N-type nitride semiconductor layer and the active layer, and a second strain reducing layer including a second InGaN film and a second GaN film alternately stacked between the first strain reducing layer and the active layer. The active layer includes an InGaN well layer, a barrier layer, an AlGaN layer between the InGaN well layer and the barrier layer, and an intermediate lattice layer between the InGaN well layer and the AlGaN layer The intermediate lattice layer including a nitride single crystal having a lattice larger than a first lattice of the InGaN well layer and smaller than a second lattice of the AlGaN layer.
