18221479. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Moon Kyun Song of Suwon-si (KR)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18221479 titled 'SEMICONDUCTOR DEVICE
The semiconductor device described in the patent application includes a fin-shaped pattern, a field insulating film covering a sidewall of the fin-shaped pattern, a source/drain pattern on the upper surface of the fin-shaped pattern, a source/drain etch stop film extending along the upper surface of the field insulating film and a sidewall of the source/drain pattern, a source/drain contact connected to the source/drain pattern, a buried conductive pattern penetrating through a substrate and connected to the source/drain contact, with a portion of the buried conductive pattern within the field insulating film, and a rear wiring line connected to the buried conductive pattern. The field insulating film consists of a first field filling film and a first field stop film, with the first field stop film having etch selectivity with respect to the first field filling film.
- The semiconductor device features a unique fin-shaped pattern design.
- The field insulating film includes a first field filling film and a first field stop film for enhanced insulation.
- The source/drain etch stop film prevents unwanted etching during manufacturing processes.
- The buried conductive pattern provides efficient electrical connections within the device.
- The rear wiring line enables external connections for the semiconductor device.
Potential Applications: - This technology can be applied in the manufacturing of advanced semiconductor devices. - It can be used in the production of high-performance electronic components.
Problems Solved: - Improved insulation and etch stop capabilities in semiconductor devices. - Enhanced electrical connectivity within the device structure.
Benefits: - Increased efficiency and reliability in semiconductor device manufacturing. - Enhanced performance and functionality of electronic components.
Commercial Applications: Title: Advanced Semiconductor Device Technology for Enhanced Performance This technology has potential commercial applications in the semiconductor industry, particularly in the development of high-performance electronic devices. It can impact the market by improving the efficiency and reliability of semiconductor manufacturing processes, leading to the production of more advanced electronic components.
Prior Art: Readers interested in exploring prior art related to this technology can start by researching semiconductor device manufacturing processes, field insulating films, and etch stop techniques in the semiconductor industry.
Frequently Updated Research: Researchers in the field of semiconductor technology are constantly exploring new materials and techniques to enhance the performance and efficiency of semiconductor devices. Stay updated on the latest advancements in field insulating films and etch stop technologies for semiconductor manufacturing.
Questions about Semiconductor Device Technology: 1. What are the key features of the fin-shaped pattern design in semiconductor devices? The fin-shaped pattern design in semiconductor devices provides increased surface area for improved performance and efficiency.
2. How does the source/drain etch stop film contribute to the manufacturing process of semiconductor devices? The source/drain etch stop film helps prevent unwanted etching during manufacturing processes, ensuring precise patterning and alignment of components.
Original Abstract Submitted
A semiconductor device includes a fin-shaped pattern, a field insulating film covering a sidewall of the fin-shaped pattern, a source/drain pattern disposed on an upper surface of the fin-shaped pattern, a source/drain etch stop film extending along an upper surface of the field insulating film and a sidewall of the source/drain pattern, a source/drain contact connected to the source/drain pattern, a buried conductive pattern penetrating through a substrate and connected to the source/drain contact, a portion of the buried conductive pattern being disposed within the field insulating film, and a rear wiring line connected to the buried conductive pattern. The field insulating film includes a first field filling film and a first field stop film. The first field stop film is disposed between the first field filling film and the substrate. The first field stop film includes a material having etch selectivity with respect to the first field filling film.
