18220861. SEMICONDUCTOR MEMORY DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
Contents
SEMICONDUCTOR MEMORY DEVICE
Organization Name
Inventor(s)
Jae Joon Song of Suwon-si (KR)
Dong-Sik Park of Suwon-si (KR)
SEMICONDUCTOR MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18220861 titled 'SEMICONDUCTOR MEMORY DEVICE
The semiconductor memory device described in the patent application includes a complex structure with various components such as bitlines, channel structures, wordlines, landing pads, and data storage patterns.
- The device features a peripheral gate structure on a substrate, with bitlines extending in one direction and channel trenches in another direction intersecting the first.
- Channel structures on the bitlines contain a metal oxide material, with first and second wordlines extending in the direction of the channel trenches.
- Landing pads connected to the channel structures provide a platform for data storage patterns, while pad separation patterns ensure proper spacing.
- First passage patterns made of an oxide-based insulating material are connected to the protruding insulating pattern through the pad separation patterns.
Potential Applications: This technology can be applied in various semiconductor memory devices, improving data storage and retrieval capabilities in electronic devices.
Problems Solved: The innovation addresses the need for efficient and reliable data storage solutions in semiconductor memory devices.
Benefits: The technology offers enhanced performance, increased storage capacity, and improved data access speeds in electronic devices.
Commercial Applications: This technology has significant commercial potential in the semiconductor industry, particularly in the development of advanced memory devices for consumer electronics, data centers, and other applications.
Questions about the technology: 1. How does the protruding insulating pattern contribute to the overall functionality of the semiconductor memory device? 2. What advantages does the use of metal oxide in the channel structures provide in terms of data storage and retrieval efficiency?
Original Abstract Submitted
Disclosed is a semiconductor memory device including a peripheral gate structure on a substrate, bitlines disposed on the peripheral gate structure and extending in a first direction, a protruding insulating pattern including channel trenches, extending in a second direction intersecting the first direction, channel structures disposed on the bitlines in the channel trenches and including a metal oxide, first wordlines disposed on the channel structures and extending in the second direction, second wordlines disposed on the channel structures, extending in the second direction, and spaced apart from the first wordlines in the first direction, landing pads disposed on the channel structures and connected to the channel structures, pad separation patterns disposed on the protruding insulating pattern and separating the landing pads, first passage patterns connected to the protruding insulating pattern through pad separation patterns and formed of an oxide-based insulating material, and data storage patterns disposed on the landing pads.
