18219875. THREE-DIMENSIONAL SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
Contents
- 1 THREE-DIMENSIONAL SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 THREE-DIMENSIONAL SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
THREE-DIMENSIONAL SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
Organization Name
Inventor(s)
THREE-DIMENSIONAL SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18219875 titled 'THREE-DIMENSIONAL SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
Simplified Explanation
The three-dimensional semiconductor device described in the abstract includes a lower connection structure, a device structure, and an upper connection structure arranged along a first direction. The device structure consists of a substrate on the lower connection structure, first and second source/drain patterns on the substrate, a separation pattern adjacent to the source/drain patterns in a second direction, and a through conductive pattern adjacent to the separation pattern in a third direction. The through conductive pattern connects the lower connection structure and the upper connection structure, either through the lower connection structure to the first source/drain pattern or through the upper connection structure to the second source/drain pattern.
- Lower connection structure, device structure, and upper connection structure are arranged sequentially along a first direction.
- Device structure includes a substrate, first and second source/drain patterns, a separation pattern, and a through conductive pattern.
- Through conductive pattern connects lower and upper connection structures, linking source/drain patterns.
Potential Applications
The technology described in the patent application could be applied in:
- Semiconductor manufacturing
- Electronics industry
- Integrated circuit design
Problems Solved
This technology helps in:
- Enhancing connectivity in semiconductor devices
- Improving performance and efficiency of electronic devices
Benefits
The benefits of this technology include:
- Increased functionality of semiconductor devices
- Enhanced reliability and durability of electronic components
Potential Commercial Applications
The potential commercial applications of this technology could be seen in:
- Consumer electronics
- Telecommunications industry
- Automotive sector
Possible Prior Art
One possible prior art related to this technology is the development of three-dimensional integrated circuits with improved connectivity and performance.
Unanswered Questions
How does this technology compare to traditional two-dimensional semiconductor devices?
This article does not provide a direct comparison between three-dimensional semiconductor devices and traditional two-dimensional devices.
What are the specific manufacturing processes involved in creating these three-dimensional semiconductor devices?
The article does not delve into the detailed manufacturing processes used to create the three-dimensional semiconductor devices.
Original Abstract Submitted
A three-dimensional semiconductor device includes a lower connection structure; a device structure; and an upper connection structure sequentially disposed along a first direction, wherein the device structure includes a substrate on the lower connection structure; first and second source/drain patterns on the substrate; a separation pattern adjacent in a second direction to the source/drain patterns, the second direction being parallel to a bottom surface of the substrate; and a through conductive pattern adjacent in a third direction to the separation pattern, the third direction being parallel to the bottom surface of the substrate and intersecting the second direction, the through conductive pattern connects the lower connection structure and the upper connection structure to each other, and the through conductive pattern is connected either through the lower connection structure to the first source/drain pattern or through the upper connection structure to the second source/drain pattern.
