18219755. SEMICONDUCTOR DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
Contents
SEMICONDUCTOR DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME
Organization Name
Inventor(s)
HYUN-MOOK Choi of Suwon-si (KR)
CHAE LYOUNG Kim of Suwon-si (KR)
SEMICONDUCTOR DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18219755 titled 'SEMICONDUCTOR DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME
The semiconductor device described in the patent application consists of gate layers and lower insulating layers stacked alternately on a substrate, with a channel structure passing through them in a vertical direction. A string select gate layer is placed on the channel structure, along with a string select channel structure passing through the string select gate layer. A contact pad is positioned between the channel structure and the string select channel structure, connecting them. The lower surface of the contact pad contacts the channel structure, while the upper surface contacts the string select channel structure. The contact pad has different widths on its lower and upper surfaces.
- Gate layers and lower insulating layers are stacked alternately on a substrate.
- Channel structure passes through the gate layers and lower insulating layers vertically.
- String select gate layer and string select channel structure are positioned on the channel structure.
- Contact pad connects the channel structure to the string select channel structure.
- Different widths are present on the lower and upper surfaces of the contact pad.
Potential Applications: - This technology can be used in the manufacturing of advanced semiconductor devices. - It may find applications in the development of high-performance electronic devices.
Problems Solved: - Provides a structure for efficient vertical channel connections in semiconductor devices. - Offers a solution for connecting different layers within the device effectively.
Benefits: - Improved performance and connectivity in semiconductor devices. - Enhanced functionality and reliability of electronic components.
Commercial Applications: Title: Advanced Semiconductor Device Technology for Enhanced Connectivity This technology can be utilized in the production of cutting-edge electronic devices, leading to improved performance and reliability. The market implications include the potential for increased demand for high-performance semiconductor components in various industries.
Questions about the technology: 1. How does the unique structure of the contact pad contribute to the efficiency of vertical channel connections in the semiconductor device? 2. What are the specific advantages of using a string select gate layer in this semiconductor device design?
Original Abstract Submitted
A semiconductor device includes gate layers and lower insulating layers that are alternately stacked on an upper surface of a substrate, a channel structure passing through the gate layers and the lower insulating layers and extending in a vertical direction, a string select gate layer disposed on the channel structure, a string select channel structure passing through the string select gate layer and extending in the vertical direction, and a contact pad disposed in a space between the channel structure and the string select channel structure and connecting the channel structure to the string select channel structure. A lower surface of the contact pad contacts the channel structure and an upper surface of the contact pad contacts the string select channel structure. A first width of the lower surface of the contact pad is greater than a second width of a central portion of the contact pad. A third width of the upper surface of the contact pad is greater than the second width of the central portion of the contact pad.
