18217889. PLASMA PROCESS APPARATUS simplified abstract (Samsung Electronics Co., Ltd.)
Contents
PLASMA PROCESS APPARATUS
Organization Name
Inventor(s)
Sangwook Park of Suwon-si (KR)
Kyoungwhan Oh of Suwon-si (KR)
PLASMA PROCESS APPARATUS - A simplified explanation of the abstract
This abstract first appeared for US patent application 18217889 titled 'PLASMA PROCESS APPARATUS
The patent application describes a plasma process apparatus with a unique configuration to deposit deposition particles on a substrate using plasma and magnetic fields.
- Chamber with a plasma processing space
- Substrate stage with a seating surface
- Target with deposition particles
- Gas supplier for supplying gas
- Plasma generator for generating plasma
- Rotatable permanent magnet on the target for distributing plasma
- Coil assembly on the chamber wall for generating magnetic fields guiding the plasma
Potential Applications: - Semiconductor manufacturing - Thin film deposition - Surface modification processes
Problems Solved: - Precise control of deposition on substrates - Enhanced uniformity of coatings - Efficient use of plasma for material processing
Benefits: - Improved deposition accuracy - Increased efficiency in material processing - Enhanced quality of thin films
Commercial Applications: Plasma-enhanced chemical vapor deposition systems for semiconductor industry
Questions about the technology: 1. How does the magnetic field influence the distribution of plasma on the target? 2. What advantages does the coil assembly provide in guiding the plasma flow?
Frequently Updated Research: Ongoing studies on optimizing plasma parameters for enhanced deposition control.
Original Abstract Submitted
Provided a plasma process apparatus including a chamber including a plasma processing space, a substrate stage included in the chamber, the substrate stage including a seating surface, a target including deposition particles to be deposited on the substrate, a gas supplier configured to supply gas into the chamber, a plasma generator configured to generate plasma from the gas, the plasma generator configured to deposit the deposition particles on the substrate through the plasma, at least one permanent magnet on the target being rotatable and configured to distribute the plasma on the target through a magnetic field, and a coil assembly on an outer wall of the chamber and assembly including first through third side coils inclined and being configured to generate first through third vectors, respectively, and the coil assembly being configured to generate a magnetic field vector guiding the plasma through a combination of the first through third vectors.
