18216211. IMAGE SENSOR AND METHOD OF MANUFACTURING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
IMAGE SENSOR AND METHOD OF MANUFACTURING THE SAME
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IMAGE SENSOR AND METHOD OF MANUFACTURING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18216211 titled 'IMAGE SENSOR AND METHOD OF MANUFACTURING THE SAME
Simplified Explanation
The abstract describes an image sensor that includes a first substrate with an analog block and a digital block, separated by an isolation structure. The digital block has a first transistor, while the analog block has a second transistor. There is a wiring on the analog block that is electrically connected to the second transistor. A second substrate is placed on the wiring, and on top of it is a color filter array layer with color filters and a microlens. The second substrate also contains a light sensing element. A transfer gate extends through the lower portion of the second substrate next to the light sensing element, and a floating diffusion region is located at the lower portion of the second substrate next to the transfer gate and connected to the wiring.
- The image sensor has separate analog and digital blocks, allowing for better signal processing and noise reduction.
- The isolation structure divides the analog and digital blocks, preventing interference between them.
- The presence of color filters and a microlens on the second substrate enables the sensor to capture color information.
- The transfer gate and floating diffusion region enhance the light sensing capabilities of the sensor.
Potential Applications
- Digital cameras
- Smartphone cameras
- Surveillance cameras
- Medical imaging devices
Problems Solved
- Interference between analog and digital signals in an image sensor
- Capturing accurate color information in an image sensor
- Enhancing the light sensing capabilities of an image sensor
Benefits
- Improved image quality and color accuracy
- Reduced noise and interference in image capture
- Enhanced low-light performance
- Versatile applications in various imaging devices
Original Abstract Submitted
An image sensor includes a first substrate including an analog block and a digital block, an isolation structure extending through the first substrate and dividing the analog block from the digital block, a first transistor on the digital block, a second transistor on the analog block, a wiring on and electrically connected to the second transistor, a second substrate on the wiring, a color filter array layer on the second substrate and including color filters, a microlens on the color filter array layer, a light sensing element in the second substrate, a transfer gate (TG) extending through a lower portion of the second substrate adjacent to the light sensing element, and a floating diffusion (FD) region at a lower portion of the second substrate adjacent to the TG and electrically connected to the wiring.
