18215533. VERTICAL NAND FLASH MEMORY DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)

VERTICAL NAND FLASH MEMORY DEVICE

Organization Name

SAMSUNG ELECTRONICS CO., LTD.

Inventor(s)

Seungdam Hyun of Suwon-si (KR)

Kyunghun Kim of Suwon-si (KR)

Sunho Kim of Suwon-si (KR)

Hyungyung Kim of Suwon-si (KR)

Kwangmin Park of Suwon-si (KR)

Seungyeul Yang of Suwon-si (KR)

Gukhyon Yon of Suwon-si (KR)

Minhyun Lee of Suwon-si (KR)

Seokhoon Choi of Suwon-si (KR)

Hoseok Heo of Suwon-si (KR)

VERTICAL NAND FLASH MEMORY DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18215533 titled 'VERTICAL NAND FLASH MEMORY DEVICE

The abstract describes a vertical NAND flash memory device with multiple cell arrays, each containing a channel layer, a charge trap layer with a matrix of dielectric and charge trap material, and gate electrodes.

• Vertical NAND flash memory device with multiple cell arrays
• Each cell array includes a channel layer, charge trap layer, and gate electrodes
• Charge trap layer contains a matrix of dielectric and charge trap material
• Charge trap layer includes anti-ferroelectric nanocrystals or ferroelectric nanocrystals

Potential Applications: - Data storage devices - Solid-state drives - Mobile devices - Embedded systems

Problems Solved: - Increased data storage capacity - Enhanced data retention and reliability - Improved performance and speed

Benefits: - Higher storage density - Faster data access - Enhanced data security

Commercial Applications: Title: "Innovative Vertical NAND Flash Memory for High-Performance Data Storage" This technology can be used in various commercial applications such as consumer electronics, enterprise storage solutions, and data centers, catering to the growing demand for high-speed and high-capacity storage solutions.

Questions about the technology: 1. How does the inclusion of anti-ferroelectric nanocrystals or ferroelectric nanocrystals in the charge trap layer impact the performance of the vertical NAND flash memory device? 2. What are the specific advantages of using a matrix of dielectric and charge trap material in the charge trap layer of the cell arrays?

Original Abstract Submitted

A vertical NAND flash memory device includes a plurality of cell arrays, where each cell array of the plurality of cell arrays includes a channel layer, a charge trap layer provided on the channel layer, the charge trap layer including a matrix comprising a dielectric and a charge trap material in the matrix and including anti-ferroelectric nanocrystals or ferroelectric nanocrystals, and a plurality of gate electrodes provided on the charge trap layer.