18215474. MEMORY DEVICE INTERFACE AND METHOD simplified abstract (Micron Technology, Inc.)
Contents
MEMORY DEVICE INTERFACE AND METHOD
Organization Name
Inventor(s)
Roy E. Greeff of Boise ID (US)
Matthew B. Leslie of Boise ID (US)
MEMORY DEVICE INTERFACE AND METHOD - A simplified explanation of the abstract
This abstract first appeared for US patent application 18215474 titled 'MEMORY DEVICE INTERFACE AND METHOD
Simplified Explanation
- Explanation:**
The patent application describes memory devices and systems that include a buffer interface to translate high-speed data interactions on a host interface side into slower, wider data interactions on a DRAM interface side. The buffer interface is designed to match the capacity of the host interface and provide data recovery capabilities in case of memory structure failure.
- Potential Applications:**
- High-performance computing systems - Data centers - Networking equipment - Mobile devices
- Problems Solved:**
- Efficient data transfer between high-speed host interfaces and slower DRAM interfaces - Data recovery in case of memory structure failure - Matching capacity between different interface speeds
- Benefits:**
- Improved data transfer efficiency - Enhanced reliability with data recovery capabilities - Better utilization of memory capacity - Suitable for various applications requiring high-speed data processing.
Original Abstract Submitted
Apparatus and methods are disclosed, including memory devices and systems. Example memory devices, systems and methods include a buffer interface to translate high speed data interactions on a host interface side into slower, wider data interactions on a DRAM interface side. The slower, and wider DRAM interface may be configured to substantially match the capacity of the narrower, higher speed host interface. In some examples, the buffer interface may be configured to provide multiple sub-channel interfaces each coupled to one or more regions within the memory structure and configured to facilitate data recovery in the event of a failure of some portion of the memory structure. Selected example memory devices, systems and methods include an individual DRAM die, or one or more stacks of DRAM dies coupled to a buffer die.
