18215280. SEMICONDUCTOR MEMORY DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
Contents
- 1 SEMICONDUCTOR MEMORY DEVICE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR MEMORY DEVICE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
SEMICONDUCTOR MEMORY DEVICE
Organization Name
Inventor(s)
Joo-Heon Kang of Suwon-si (KR)
Kyunghoon Kim of Suwon-si (KR)
SEMICONDUCTOR MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18215280 titled 'SEMICONDUCTOR MEMORY DEVICE
Simplified Explanation
The semiconductor device described in the patent application includes a gate stacked structure with gate patterns and insulating patterns alternately stacked, a gate insulating layer on the sidewall of the gate stacked structure, a channel layer surrounded by the gate insulating layer, a source line surrounded by the channel layer, a variable resistive layer surrounded by the channel layer, and a drain line surrounded by the channel layer.
- Gate stacked structure with alternating gate and insulating patterns
- Gate insulating layer on the sidewall of the gate stacked structure
- Channel layer surrounded by the gate insulating layer
- Source line and drain line surrounded by the channel layer
- Variable resistive layer within the channel layer
Potential Applications
This technology could be applied in the development of advanced semiconductor devices, such as memory storage devices, logic circuits, and sensors.
Problems Solved
This technology helps in improving the performance and efficiency of semiconductor devices by enhancing the control of electric current flow and reducing power consumption.
Benefits
The benefits of this technology include increased speed, reliability, and energy efficiency in semiconductor devices, leading to better overall performance and functionality.
Potential Commercial Applications
- Advanced memory storage devices
- High-performance logic circuits
- Efficient sensors for various applications
Possible Prior Art
One possible prior art for this technology could be the development of similar semiconductor devices with gate stacked structures and variable resistive layers, but without the specific configuration and features described in this patent application.
Unanswered Questions
How does this technology compare to existing semiconductor devices in terms of performance and efficiency?
The article does not provide a direct comparison with existing semiconductor devices to evaluate the advantages and limitations of this technology.
What are the specific manufacturing processes involved in creating this semiconductor device?
The article does not detail the specific manufacturing processes or techniques required to fabricate the semiconductor device described in the patent application.
Original Abstract Submitted
A semiconductor device includes a gate stacked structure including gate patterns and insulating patterns that are alternately stacked with each other; a gate insulating layer on a sidewall of the gate stacked structure; a channel layer surrounded by the gate insulating layer; a source line surrounded by the channel layer; a variable resistive layer surrounded by the channel layer; and a drain line surrounded by the channel layer.
