18213608. SEMICONDUCTOR LIGHT EMITTING DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
SEMICONDUCTOR LIGHT EMITTING DEVICE
Organization Name
Inventor(s)
Dongmyung Shin of Suwon-si (KR)
Seongseok Yang of Suwon-si (KR)
SEMICONDUCTOR LIGHT EMITTING DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18213608 titled 'SEMICONDUCTOR LIGHT EMITTING DEVICE
Simplified Explanation
The patent application describes a semiconductor light emitting device that includes a light emitting structure, a transparent electrode layer, and a distributed Bragg reflector (DBR) layer.
- The light emitting structure consists of a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer.
- The transparent electrode layer is provided on the second conductivity-type semiconductor layer.
- The DBR layer is provided on an insulating layer and consists of a first insulating film and a second insulating film with different refractive indices.
- The insulating layer and the DBR layer have multiple holes connected to a contact region of the transparent electrode layer.
Potential applications of this technology:
- Lighting: The semiconductor light emitting device can be used in various lighting applications, such as residential, commercial, and industrial lighting.
- Displays: The device can be integrated into displays, including televisions, computer monitors, and mobile device screens.
- Automotive lighting: The technology can be applied to automotive lighting systems, including headlights, taillights, and interior lighting.
Problems solved by this technology:
- Improved light emission: The use of a distributed Bragg reflector (DBR) layer helps enhance the efficiency and directionality of light emission from the device.
- Electrical contact optimization: The presence of multiple holes connected to the contact region of the transparent electrode layer allows for improved electrical contact and performance.
Benefits of this technology:
- Higher efficiency: The device's structure and the DBR layer contribute to increased light emission efficiency, resulting in energy savings and improved performance.
- Enhanced light directionality: The DBR layer helps control the direction of emitted light, leading to better light distribution and utilization.
- Improved electrical contact: The design of the device ensures better electrical contact, reducing losses and improving overall device performance.
Original Abstract Submitted
A semiconductor light emitting device includes a light emitting structure including a first conductivity-type semiconductor layer including an upper surface having a first region and a second region surrounding the first region, and active layer, and a second conductivity-type semiconductor layer, the active layer and the second conductivity-type semiconductor layer being provided in sequence on the first region, a transparent electrode layer provided on the second conductivity-type semiconductor layer, and a distributed Bragg reflector (DBR) layer provided on the insulating layer, the DBR including a first insulating film having a first refractive index and a second insulating film having a second refractive index different from the first refractive index, where the insulating layer and the DBR layer includes a plurality of holes connected to a contact region of the transparent electrode layer.
