18212323. INTEGRATED CIRCUIT DEVICE AND ELECTRONIC SYSTEM COMPRISING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
Contents
INTEGRATED CIRCUIT DEVICE AND ELECTRONIC SYSTEM COMPRISING THE SAME
Organization Name
Inventor(s)
INTEGRATED CIRCUIT DEVICE AND ELECTRONIC SYSTEM COMPRISING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18212323 titled 'INTEGRATED CIRCUIT DEVICE AND ELECTRONIC SYSTEM COMPRISING THE SAME
Simplified Explanation
The present disclosure relates to integrated circuit devices and systems. Specifically, it describes an integrated circuit device that includes a semiconductor substrate with a memory cell area and a connection area. The device also includes a gate stack with multiple word line gate layers and insulating layers, which has a step structure in the connection area. Additionally, there is a word line cut region that passes through the word line gate layers in both the memory cell area and the connection area, extending in a third direction. The memory cell area contains multiple first channel structures, while the gate stack in the memory cell area has a string select line gate layer. The device also includes multiple second channel structures that pass through the string select line gate layer, as well as a string select line cut region that passes through the string select line gate layer.
- Integrated circuit device with a semiconductor substrate, memory cell area, and connection area
- Gate stack with multiple word line gate layers and insulating layers
- Step structure in the connection area of the gate stack
- Word line cut region passing through the word line gate layers in the memory cell area and connection area
- Multiple first channel structures in the memory cell area
- String select line gate layer in the gate stack of the memory cell area
- Multiple second channel structures passing through the string select line gate layer
- String select line cut region passing through the string select line gate layer
Potential applications of this technology:
- Memory devices
- Data storage systems
- Semiconductor manufacturing
Problems solved by this technology:
- Efficient integration of multiple word line gate layers and insulating layers in an integrated circuit device
- Effective passage of word line cut and string select line cut regions through the gate stack
- Improved performance and functionality of memory cell areas
Benefits of this technology:
- Increased memory capacity and density
- Enhanced data storage and retrieval speed
- Improved overall performance and efficiency of integrated circuit devices
Original Abstract Submitted
The present disclosure provides for apparatuses and systems including integrated circuit devices. In some embodiments, an integrated circuit device includes a semiconductor substrate including a memory cell area and a connection area, a gate stack including a plurality of word line gate layers and a plurality of insulating layers and having a step structure in the connection area, a word line cut region passing through the plurality of word line gate layers in the memory cell area and the connection area and extending in a third direction, a plurality of first channel structures disposed on the memory cell area, a string select line gate layer disposed on the gate stack in the memory cell area, a plurality of second channel structures passing through the string select line gate layer, and a string select line cut region passing through the string select line gate layer.
