18211873. SCHOTTKY BARRIER PHOTODETECTOR simplified abstract (Samsung Electronics Co., Ltd.)
Contents
SCHOTTKY BARRIER PHOTODETECTOR
Organization Name
Inventor(s)
Chanwook Baik of Suwon-si (KR)
SCHOTTKY BARRIER PHOTODETECTOR - A simplified explanation of the abstract
This abstract first appeared for US patent application 18211873 titled 'SCHOTTKY BARRIER PHOTODETECTOR
The abstract describes a photodetector with a semiconductor layer, a conductive layer forming a Schottky junction with the semiconductor layer, and a tunneling barrier layer between them to block dark current.
- Semiconductor layer
- Conductive layer forming a Schottky junction
- Tunneling barrier layer to block dark current
- Configuration to prevent dark current between layers
Potential Applications: - Photovoltaic cells - Optical communication systems - Remote sensing devices
Problems Solved: - Minimizing dark current in photodetectors - Enhancing efficiency of light detection
Benefits: - Improved sensitivity to light - Reduced noise in signal detection - Enhanced performance in low-light conditions
Commercial Applications: Title: "Advanced Photodetector Technology for Enhanced Light Sensing" This technology can be utilized in industries such as: - Aerospace - Defense - Surveillance systems
Frequently Updated Research: Researchers are continuously exploring ways to optimize the tunneling barrier layer for better performance in photodetectors.
Questions about Photodetector Technology: 1. How does the tunneling barrier layer contribute to reducing dark current in the photodetector? The tunneling barrier layer acts as a barrier to prevent the flow of dark current between the semiconductor and conductive layers, thereby improving the signal-to-noise ratio of the photodetector.
2. What are the key advantages of using a Schottky junction in the photodetector design? A Schottky junction allows for efficient charge carrier separation and collection, leading to enhanced performance and sensitivity of the photodetector.
Original Abstract Submitted
A photodetector, including: a semiconductor layer, a conductive layer forming a Schottky junction with the semiconductor layer, and a tunneling barrier layer between the semiconductor layer and the conductive layer, wherein the tunneling barrier layer may be configured to block a dark current between the semiconductor layer and the conductive layer.
