18206139. SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
Contents
- 1 SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
Organization Name
Inventor(s)
Donghoon Hwang of Suwon-si (KR)
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18206139 titled 'SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
Simplified Explanation
The semiconductor device described in the patent application includes channel patterns with different widths and a buffer channel pattern between them. The buffer channel pattern changes width from the first subset to the second subset of channel patterns.
- The semiconductor device includes an active region, channel patterns, and gate electrodes.
- The channel patterns consist of a first subset with a first width, a second subset with a second width, and a buffer channel pattern between them.
- The buffer channel pattern has a connection side surface that changes width from the first subset to the second subset.
Potential Applications
This technology could be applied in the manufacturing of high-performance semiconductor devices, such as transistors, where precise control over channel width is crucial.
Problems Solved
This innovation helps in improving the performance and efficiency of semiconductor devices by optimizing the channel patterns and ensuring smooth transitions between different widths.
Benefits
The benefits of this technology include enhanced device performance, increased efficiency, and potentially reduced power consumption in semiconductor applications.
Potential Commercial Applications
The optimized channel patterns in this technology could find applications in various industries, including electronics, telecommunications, and computing, where high-performance semiconductor devices are in demand.
Possible Prior Art
One possible prior art could be the use of buffer regions in semiconductor devices to improve performance and optimize channel widths.
Unanswered Questions
How does this technology compare to existing methods of optimizing channel patterns in semiconductor devices?
This article does not provide a direct comparison with existing methods of optimizing channel patterns in semiconductor devices.
What specific manufacturing processes are involved in implementing the buffer channel pattern described in the patent application?
The article does not delve into the specific manufacturing processes involved in implementing the buffer channel pattern in semiconductor devices.
Original Abstract Submitted
A semiconductor device may include an active region on a substrate, channel patterns on the active region, and gate electrodes on the channel patterns, respectively, and extending in a first direction. The channel patterns may include a first subset of the channel patterns, each of which has a first width, and a second subset of the channel patterns, each of which has a second width. The first and second subsets may be adjacent to each other in a second direction. The channel patterns may further include a buffer channel pattern between the first subset and the second subset. The buffer channel pattern may include a connection side surface extending in the first direction, and the connection side surface may be configured such that a width of the buffer channel pattern changes from the first width to the second width when moving from the first subset to the second subset.
