18205814. SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
Contents
- 1 SEMICONDUCTOR DEVICE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Heon Jong Shin of Suwon-si (KR)
Jin Young Park of Suwon-si (KR)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18205814 titled 'SEMICONDUCTOR DEVICE
Simplified Explanation
The semiconductor device described in the abstract includes active patterns, gate electrodes, active cuts, and vias on a substrate. Here are the key points of the innovation:
- The semiconductor device has first through third active patterns on a substrate surface.
- A gate electrode extends on the first active pattern.
- Active cuts separate the active patterns and extend in a specific direction.
- Vias extend vertically through the active patterns and into the substrate.
Potential Applications
This semiconductor device could be used in:
- Integrated circuits
- Microprocessors
- Memory devices
Problems Solved
This technology helps in:
- Increasing circuit density
- Enhancing performance
- Reducing power consumption
Benefits
The benefits of this technology include:
- Improved functionality
- Higher efficiency
- Enhanced reliability
Potential Commercial Applications
This technology could be applied in:
- Consumer electronics
- Telecommunications
- Automotive industry
Possible Prior Art
One possible prior art for this technology could be:
- Semiconductor devices with similar active patterns and cuts.
Unanswered Questions
How does this technology compare to existing semiconductor devices?
This article does not provide a direct comparison with existing semiconductor devices in terms of performance, efficiency, or cost.
What are the specific manufacturing processes involved in creating this semiconductor device?
The article does not detail the specific manufacturing processes involved in creating this semiconductor device, such as lithography, etching, or doping techniques.
Original Abstract Submitted
A semiconductor device is provided. The semiconductor device includes first through third active patterns extending in and spaced apart from each other along a first direction on a first surface of a substrate; a first gate electrode extending in a second direction on the first active pattern; a first active cut between the first and second active patterns, wherein the first active cut extends in the second direction, and the first active cut is spaced apart from the first gate electrode in the first direction; a second active cut between the second and third active patterns, wherein the second active cut extends in the second direction, and the second active cut is spaced apart from the first active cut in the first direction; and a first through via extending vertically through the second active pattern between the first and second active cuts, and into the substrate.
