18202692. NON-VOLATILE MEMORY DEVICE AND A METHOD FOR OPERATING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)

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NON-VOLATILE MEMORY DEVICE AND A METHOD FOR OPERATING THE SAME

Organization Name

SAMSUNG ELECTRONICS CO., LTD.

Inventor(s)

Sang-Hyun Joo of Seoul (KR)

NON-VOLATILE MEMORY DEVICE AND A METHOD FOR OPERATING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 18202692 titled 'NON-VOLATILE MEMORY DEVICE AND A METHOD FOR OPERATING THE SAME

Simplified Explanation

The abstract describes a non-volatile memory device that includes a control logic circuit, a voltage generator, a memory cell array, a string select transistor, a bit-line, a string select line, and a page buffer circuit. The control logic circuit generates program and erase signals based on control signals. The voltage generator generates program and erase voltages based on the program and erase signals. The memory cell array includes a memory cell and is coupled to the string select transistor, bit-line, and string select line. The page buffer circuit is coupled to the bit-line and includes a first precharge transistor that operates based on the program and erase signals. The first precharge transistor applies the program and erase voltages to the bit-line in response to the program and erase signals, respectively.

  • The patent describes a non-volatile memory device with improved control and voltage generation mechanisms.
  • The control logic circuit generates program and erase signals based on control signals.
  • The voltage generator generates program and erase voltages based on the program and erase signals.
  • The memory cell array includes a memory cell and is coupled to the string select transistor, bit-line, and string select line.
  • The page buffer circuit is coupled to the bit-line and includes a first precharge transistor that operates based on the program and erase signals.
  • The first precharge transistor applies the program and erase voltages to the bit-line in response to the program and erase signals, respectively.

Potential Applications

  • Non-volatile memory devices can be used in various electronic devices, such as smartphones, tablets, and computers.
  • The improved control and voltage generation mechanisms can enhance the performance and reliability of non-volatile memory devices.

Problems Solved

  • The patent addresses the need for efficient control and voltage generation in non-volatile memory devices.
  • It solves the problem of accurately applying program and erase voltages to the bit-line.

Benefits

  • The improved control and voltage generation mechanisms can enhance the programming and erasing efficiency of non-volatile memory devices.
  • The patent's innovations can lead to improved performance and reliability of non-volatile memory devices.
  • The technology can contribute to the development of more advanced and efficient electronic devices.


Original Abstract Submitted

In some embodiments, a non-volatile memory device includes a control logic circuit configured to generate a program signal and an erase signal based on control signals, a voltage generator configured to generate a program voltage and an erase voltage based on the program signal and the erase signal, a memory cell array including a memory cell, a string select transistor coupled to the memory cell, a bit-line coupled to the string select transistor, and a string select line coupled to the string select transistor, and a page buffer circuit coupled to the bit-line, and including a first precharge transistor that is configured to operate based on the program signal and the erase signal. The first precharge transistor is configured to apply the program voltage and the erase voltage to the bit-line in response to the program signal and the erase signal, respectively.

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