18202111. SEMICONDUCTOR DEVICES AND DATA STORAGE SYSTEMS INCLUDING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)

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SEMICONDUCTOR DEVICES AND DATA STORAGE SYSTEMS INCLUDING THE SAME

Organization Name

SAMSUNG ELECTRONICS CO., LTD.

Inventor(s)

Seulji Lee of Suwon-si (KR)

Jinhyuk Kim of Suwon-si (KR)

Byoungil Lee of Suwon-si (KR)

Sehoon Lee of Suwon-si (KR)

Jinwoo Jeon of Suwon-si (KR)

SEMICONDUCTOR DEVICES AND DATA STORAGE SYSTEMS INCLUDING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 18202111 titled 'SEMICONDUCTOR DEVICES AND DATA STORAGE SYSTEMS INCLUDING THE SAME

Simplified Explanation

The patent application describes a semiconductor device that includes a memory cell structure, a through wiring region, and a barrier structure. The memory cell structure consists of stacked gate electrodes and interlayer insulating layers, a channel structure, and isolation regions. The through wiring region includes stacked interlayer insulating layers and sacrificial insulating layers, as well as a through contact plug that connects to circuit devices. The sacrificial insulating layers have recess portions that are horizontally recessed from the barrier structure.

  • The semiconductor device includes a memory cell structure and a through wiring region.
  • The memory cell structure consists of stacked gate electrodes and interlayer insulating layers.
  • The through wiring region includes stacked interlayer insulating layers and sacrificial insulating layers.
  • The sacrificial insulating layers have recess portions that are horizontally recessed from the barrier structure.
  • The through contact plug connects to circuit devices and penetrates through the interlayer insulating layers and sacrificial insulating layers.

Potential Applications

  • This technology can be applied in the manufacturing of semiconductor devices.
  • It can be used in various electronic devices such as computers, smartphones, and tablets.

Problems Solved

  • The patent application addresses the need for improved semiconductor devices with memory cell structures and through wiring regions.
  • It solves the problem of efficiently connecting circuit devices in a semiconductor device.

Benefits

  • The described semiconductor device provides an improved memory cell structure and through wiring region.
  • The recess portions in the sacrificial insulating layers allow for more efficient connection of circuit devices.
  • This technology can lead to enhanced performance and functionality of electronic devices.


Original Abstract Submitted

A semiconductor device includes: a memory cell structure on a peripheral circuit structure; a through wiring region on the peripheral circuit structure; and a barrier structure surrounding the through wiring region. The memory cell structure includes: gate electrodes and first interlayer insulating layers that are alternately stacked, the gate electrodes forming a step shape on the second region; a channel structure; and isolation regions penetrating through the gate electrodes. The through wiring region includes: second interlayer insulating layers and sacrificial insulating layers alternately stacked on the second region; and a through contact plug penetrating through the second interlayer insulating layers and the sacrificial insulating layers, and electrically connected to the circuit devices. Each of the sacrificial insulating layers includes a recess portion that is horizontally recessed from the barrier structure toward each of the sacrificial insulating layers.