18202111. SEMICONDUCTOR DEVICES AND DATA STORAGE SYSTEMS INCLUDING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
SEMICONDUCTOR DEVICES AND DATA STORAGE SYSTEMS INCLUDING THE SAME
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SEMICONDUCTOR DEVICES AND DATA STORAGE SYSTEMS INCLUDING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18202111 titled 'SEMICONDUCTOR DEVICES AND DATA STORAGE SYSTEMS INCLUDING THE SAME
Simplified Explanation
The patent application describes a semiconductor device that includes a memory cell structure, a through wiring region, and a barrier structure. The memory cell structure consists of stacked gate electrodes and interlayer insulating layers, a channel structure, and isolation regions. The through wiring region includes stacked interlayer insulating layers and sacrificial insulating layers, as well as a through contact plug that connects to circuit devices. The sacrificial insulating layers have recess portions that are horizontally recessed from the barrier structure.
- The semiconductor device includes a memory cell structure and a through wiring region.
- The memory cell structure consists of stacked gate electrodes and interlayer insulating layers.
- The through wiring region includes stacked interlayer insulating layers and sacrificial insulating layers.
- The sacrificial insulating layers have recess portions that are horizontally recessed from the barrier structure.
- The through contact plug connects to circuit devices and penetrates through the interlayer insulating layers and sacrificial insulating layers.
Potential Applications
- This technology can be applied in the manufacturing of semiconductor devices.
- It can be used in various electronic devices such as computers, smartphones, and tablets.
Problems Solved
- The patent application addresses the need for improved semiconductor devices with memory cell structures and through wiring regions.
- It solves the problem of efficiently connecting circuit devices in a semiconductor device.
Benefits
- The described semiconductor device provides an improved memory cell structure and through wiring region.
- The recess portions in the sacrificial insulating layers allow for more efficient connection of circuit devices.
- This technology can lead to enhanced performance and functionality of electronic devices.
Original Abstract Submitted
A semiconductor device includes: a memory cell structure on a peripheral circuit structure; a through wiring region on the peripheral circuit structure; and a barrier structure surrounding the through wiring region. The memory cell structure includes: gate electrodes and first interlayer insulating layers that are alternately stacked, the gate electrodes forming a step shape on the second region; a channel structure; and isolation regions penetrating through the gate electrodes. The through wiring region includes: second interlayer insulating layers and sacrificial insulating layers alternately stacked on the second region; and a through contact plug penetrating through the second interlayer insulating layers and the sacrificial insulating layers, and electrically connected to the circuit devices. Each of the sacrificial insulating layers includes a recess portion that is horizontally recessed from the barrier structure toward each of the sacrificial insulating layers.
