18202061. MEMORY DEVICE INCLUDING SOURCE STRUCTURE HAVING CONDUCTIVE ISLANDS OF DIFFERENT WIDTHS simplified abstract (Micron Technology, Inc.)

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MEMORY DEVICE INCLUDING SOURCE STRUCTURE HAVING CONDUCTIVE ISLANDS OF DIFFERENT WIDTHS

Organization Name

Micron Technology, Inc.

Inventor(s)

Shuangqiang Luo of Boise ID (US)

MEMORY DEVICE INCLUDING SOURCE STRUCTURE HAVING CONDUCTIVE ISLANDS OF DIFFERENT WIDTHS - A simplified explanation of the abstract

This abstract first appeared for US patent application 18202061 titled 'MEMORY DEVICE INCLUDING SOURCE STRUCTURE HAVING CONDUCTIVE ISLANDS OF DIFFERENT WIDTHS

Simplified Explanation

The patent application describes an apparatus that includes a conductive structure with multiple conductive regions and islands, as well as dielectric isolators. The conductive islands are separated from each other and have different portions on either side.

  • The apparatus includes a conductive structure with multiple conductive regions and islands.
  • The conductive islands are separated from each other and have different portions on either side.
  • Dielectric isolators are used to separate the conductive islands.
  • The width of the conductive island is greater than the width of at least one conductive island in each portion.

Potential applications of this technology:

  • Memory devices
  • Integrated circuits
  • Semiconductor devices

Problems solved by this technology:

  • Improved conductivity and performance of memory cells
  • Enhanced isolation between conductive islands

Benefits of this technology:

  • Increased efficiency and reliability of memory devices
  • Better control over the conductive structure
  • Improved overall performance of integrated circuits and semiconductor devices.


Original Abstract Submitted

Some embodiments include apparatuses. One of the apparatuses includes a conductive structure including a first conductive region under first memory cells, a second conductive region under second memory cells, and a third conductive region between the first and second conductive regions; conductive islands adjacent each other and formed in the third conductive region and separated from the third conductive region; dielectric isolators separating the conductive islands from each other, wherein the conductive islands include a conductive island such that a first portion of the conductive islands is located on a first side of the conductive island, and a second portion of the conductive islands is located on a second side of the conductive island; and the width of the conductive island is greater than the width of at least one conductive island in each of the first and second portions of the conductive islands.