18197521. Electromagnetic Radiation Detector with Reduced Dark Current simplified abstract (Apple Inc.)
Contents
Electromagnetic Radiation Detector with Reduced Dark Current
Organization Name
Inventor(s)
Matthew T. Morea of Cupertino CA (US)
Daniel Mahgerefteh of Campbell CA (US)
Romain F. Chevallier of Santa Clara CA (US)
Tomas Sarmiento of Mountain View CA (US)
Electromagnetic Radiation Detector with Reduced Dark Current - A simplified explanation of the abstract
This abstract first appeared for US patent application 18197521 titled 'Electromagnetic Radiation Detector with Reduced Dark Current
Simplified Explanation
The abstract of the patent application describes an electromagnetic radiation detector that includes dark current isolation regions. These regions are designed to position PN junctions away from areas that may worsen dark current when a depletion region is present.
- The patent application describes an electromagnetic radiation detector.
- The detector includes one or more dark current isolation regions.
- These regions are used to position PN junctions away from areas that can exacerbate dark current.
- The purpose of the isolation regions is to prevent the worsening of dark current when a depletion region is present.
Potential Applications of this Technology:
- Medical imaging devices
- Security scanners
- Radiation monitoring systems
- Scientific research equipment
Problems Solved by this Technology:
- Reduces dark current in electromagnetic radiation detectors
- Improves the accuracy and sensitivity of radiation detection
- Minimizes noise and interference in radiation measurements
Benefits of this Technology:
- Enhanced performance and reliability of radiation detectors
- Improved image quality in medical imaging devices
- Increased safety and accuracy in radiation monitoring systems
- Enables more precise scientific research in radiation-related fields
Original Abstract Submitted
An electromagnetic radiation detector includes one or more dark current isolation regions provided to position one or more PN junctions formed in the device away from areas that may exacerbate dark current when a depletion region is present.
