18193052. SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
Contents
- 1 SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Commercial Applications
- 1.9 Prior Art
- 1.10 Frequently Updated Research
- 1.11 Questions about Semiconductor Doping
- 1.12 Original Abstract Submitted
SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF
Organization Name
Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor(s)
Jhon Jhy Liaw of Hsinchu County (TW)
SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF - A simplified explanation of the abstract
This abstract first appeared for US patent application 18193052 titled 'SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF
Simplified Explanation
The method involves creating semiconductor sheets on the front side of a semiconductive layer, surrounding them with gate strips, and adding source/drain structures on each side. The semiconductive layer is doped with a dopant of the same conductivity type as the source/drain structures, and a power supply voltage line is formed on the back side.
- Formation of semiconductor sheets on the front side of a semiconductive layer
- Surrounding the semiconductor sheets with gate strips
- Adding source/drain structures on each side of the semiconductor sheets
- Doping the semiconductive layer with a dopant of the same conductivity type as the source/drain structures
- Formation of a power supply voltage line on the back side of the doped semiconductive layer
Potential Applications
This technology can be applied in the manufacturing of advanced semiconductor devices, such as integrated circuits and microprocessors.
Problems Solved
This method addresses the need for efficient and reliable doping of semiconductive layers in semiconductor manufacturing processes.
Benefits
The method allows for precise control over the doping process, leading to improved performance and functionality of semiconductor devices.
Commercial Applications
The technology can be utilized in the production of high-performance electronic devices, contributing to advancements in the semiconductor industry.
Prior Art
Prior research in semiconductor manufacturing processes and doping techniques can provide valuable insights into the development of this technology.
Frequently Updated Research
Ongoing research in semiconductor materials and fabrication methods may offer new advancements and improvements to this technology.
Questions about Semiconductor Doping
What are the key benefits of precise doping in semiconductor manufacturing?
Precise doping in semiconductor manufacturing ensures consistent electrical properties and performance of the resulting devices.
How does the doping process impact the overall functionality of semiconductor devices?
The doping process influences the conductivity and behavior of semiconductor materials, directly affecting the functionality and efficiency of electronic components.
Original Abstract Submitted
A method includes forming a plurality of semiconductor sheets on a front-side of a semiconductive layer; forming a gate strip surrounding each of the semiconductor sheets; forming a plurality of source/drain structures on either side of each of the semiconductor sheets; doping the semiconductive layer with a dopant, the dopant has a same conductivity type as the source/drain structures; forming a power supply voltage line on a back-side of the doped semiconductive layer.
