18192329. SEMICONDUCTOR DEVICES simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)

SEMICONDUCTOR DEVICES

Organization Name

SAMSUNG ELECTRONICS CO., LTD.

Inventor(s)

Jongmin Kim of Suwon-si (KR)

Sohyun Park of Suwon-si (KR)

Chansic Yoon of Suwon-si (KR)

Dongmin Choi of Suwon-si (KR)

Seungbo Ko of Suwon-si (KR)

Hyosub Kim of Suwon-si (KR)

Jingkuk Bae of Suwon-si (KR)

Woojin Jeong of Suwon-si (KR)

Eunkyung Cha of Suwon-si (KR)

Junhyeok Ahn of Suwon-si (KR)

SEMICONDUCTOR DEVICES - A simplified explanation of the abstract

This abstract first appeared for US patent application 18192329 titled 'SEMICONDUCTOR DEVICES

Simplified Explanation

The patent application describes a semiconductor device with a specific structure involving contact plugs, spacer structures, and bit line structures.

• The device includes a first contact plug structure on a substrate, a lower spacer structure on the sidewall of the first contact plug structure, and a bit line structure on the first contact plug structure.
• The first contact plug structure consists of a conductive pad, an ohmic contact pattern, and a conductive filling pattern.
• The conductive filling pattern is made of metal and has a lower portion with a wider width and an upper portion with a narrower width.
• The lower spacer structure is in contact with the sidewall of the conductive filling pattern.

Potential applications of this technology:

• This semiconductor device structure can be used in various electronic devices such as smartphones, computers, and tablets.
• It can be applied in memory devices, logic circuits, and other semiconductor components.

Problems solved by this technology:

• The specific structure of the device helps to improve the performance and efficiency of the semiconductor device.
• It provides a more reliable and stable connection between the different components of the device.

Benefits of this technology:

• The improved performance and efficiency of the semiconductor device can lead to faster and more reliable electronic devices.
• The stable connection between components enhances the overall durability and lifespan of the device.

Original Abstract Submitted

A semiconductor device including a first contact plug structure on a substrate, a lower spacer structure on a sidewall of the first contact plug structure, and a bit line structure on the first contact plug structure and including a conductive structure and an insulation structure stacked in a vertical direction substantially perpendicular to an upper surface of the substrate may be provided. The first contact plug structure may include a conductive pad contacting the upper surface of the substrate, an ohmic contact pattern on the conductive pad, and a conductive filling pattern on the ohmic contact pattern. The conductive filling pattern may include metal, and include a lower portion having a relatively large width and an upper portion having a relatively small width. The lower spacer structure may contact a sidewall of the conductive filling pattern.