18190837. SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
- 1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 How does this technology compare to existing semiconductor manufacturing methods?
- 1.11 What are the specific performance improvements achieved by this technology?
- 1.12 Original Abstract Submitted
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
Organization Name
Inventor(s)
Edwardnamkyu Cho of Suwon-si (KR)
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18190837 titled 'SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
Simplified Explanation
The manufacturing method of a semiconductor device involves forming sacrificial patterns, insulating layers, dummy patterns, recesses, source/drain patterns, and gate electrodes in a specific sequence to create the final device.
- Plurality of main gate sacrificial patterns are formed on a stacked structure of subgate sacrificial patterns and semiconductor patterns.
- First insulating layer is formed between main gate sacrificial patterns.
- Main gate sacrificial patterns are removed, followed by the removal of subgate sacrificial patterns.
- Main gate dummy pattern and subgate dummy patterns are formed in the respective spaces.
- A recess is formed under the space where the first insulating layer is removed.
- Source/drain pattern is formed within the recess.
- Second insulating layer is formed on the source/drain pattern.
- Main gate dummy pattern and subgate dummy patterns are removed.
- Gate electrode is formed in the space where the dummy patterns were removed.
Potential Applications
The technology described in this patent application can be applied in the manufacturing of advanced semiconductor devices, such as integrated circuits, microprocessors, and memory chips.
Problems Solved
This technology solves the problem of efficiently fabricating semiconductor devices with complex structures and high precision requirements.
Benefits
The benefits of this technology include improved performance, reduced manufacturing costs, and enhanced reliability of semiconductor devices.
Potential Commercial Applications
The potential commercial applications of this technology include the semiconductor industry, electronics manufacturing, and research institutions.
Possible Prior Art
One possible prior art related to this technology is the use of sacrificial patterns in semiconductor device fabrication processes to create intricate structures and features.
Unanswered Questions
How does this technology compare to existing semiconductor manufacturing methods?
The article does not provide a direct comparison between this technology and existing semiconductor manufacturing methods. It would be helpful to understand the specific advantages and disadvantages of this new method in comparison to traditional techniques.
What are the specific performance improvements achieved by this technology?
The article does not detail the specific performance improvements achieved by implementing this technology. It would be beneficial to know how this method enhances the speed, power efficiency, or other key metrics of semiconductor devices.
Original Abstract Submitted
A manufacturing method of a semiconductor device, includes forming a plurality of main gate sacrificial patterns spaced apart from each other on a stacked structure of subgate sacrificial patterns and semiconductor patterns; forming a first insulating layer between main gate sacrificial patterns; removing the main gate sacrificial patterns; removing the subgate sacrificial patterns; forming a main gate dummy pattern in a space from which the main gate sacrificial patterns are removed; forming a plurality of subgate dummy patterns in a space from which the subgate sacrificial patterns are removed; forming a recess under a space where the first insulating layer is removed; forming a source/drain pattern within the recess; forming a second insulating layer on the source/drain pattern; removing the main gate dummy pattern and the subgate dummy patterns; and forming a gate electrode in a space where the main gate dummy pattern and the subgate dummy patterns are removed.
