18187965. ROUNDED NANORIBBONS WITH REGROWN CAPS simplified abstract (Intel Corporation)
Contents
ROUNDED NANORIBBONS WITH REGROWN CAPS
Organization Name
Inventor(s)
Robin Chao of Portland OR (US)
Feng Zhang of Hillsboro OR (US)
Minwoo Jang of Portland OR (US)
ROUNDED NANORIBBONS WITH REGROWN CAPS - A simplified explanation of the abstract
This abstract first appeared for US patent application 18187965 titled 'ROUNDED NANORIBBONS WITH REGROWN CAPS
The patent application describes nanoribbon-based transistor devices with rounded cross-sections, including nanoribbons with outer layers of semiconductor channel material.
- Nanoribbon-based transistor devices have rounded cross-sections.
- Nanoribbons may have caps or outer layers of semiconductor channel material.
- Different materials can be used for the outer layers of NMOS and PMOS transistors.
- Integrated circuit devices can include NMOS transistors with outer layers of silicon and PMOS transistors with outer layers of silicon germanium.
Potential Applications: - Semiconductor industry for advanced transistor technology - Electronics manufacturing for improved performance - Nanotechnology research for developing new materials and devices
Problems Solved: - Enhancing transistor performance with nanoribbon-based design - Improving semiconductor device efficiency and reliability
Benefits: - Higher transistor density on integrated circuits - Enhanced electrical properties for better device performance - Potential for smaller and more efficient electronic devices
Commercial Applications: Title: Advanced Nanoribbon-Based Transistor Technology for Semiconductor Industry This technology can be used in the production of high-performance electronic devices, leading to improved efficiency and functionality in various consumer electronics, communication systems, and computing devices.
Prior Art: Readers can explore prior research on nanoribbon-based transistor devices, semiconductor channel materials, and integrated circuit design to understand the evolution of this technology.
Frequently Updated Research: Stay informed about the latest advancements in nanoribbon-based transistor technology, semiconductor materials research, and integrated circuit innovations to keep up with industry developments.
Questions about Nanoribbon-Based Transistor Devices: 1. How do nanoribbon-based transistor devices with rounded cross-sections differ from traditional transistor designs?
Nanoribbon-based transistor devices offer improved performance and efficiency due to their unique structure and materials.
2. What are the potential challenges in scaling up the production of nanoribbon-based transistor devices for commercial applications?
Scaling up production may require optimizing manufacturing processes and ensuring consistent quality control measures.
Original Abstract Submitted
Described herein are nanoribbon-based transistor devices in which the nanoribbons have rounded cross-sections. The nanoribbons may include caps or outer layers of semiconductor channel material grown over an inner layer of semiconductor channel material. Different materials may be used for the outer layers of NMOS and PMOS transistors. In one example, an integrated circuit device includes NMOS transistors formed from or more nanoribbons with rounded cross-sections and an outer layer of silicon, and a PMOS transistors formed from or more nanoribbons with rounded cross-sections and an outer layer of silicon germanium.
