18187803. THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME
Organization Name
Inventor(s)
Joonyoung Kwon of Suwon-si (KR)
THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18187803 titled 'THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME
Simplified Explanation
The abstract describes a three-dimensional semiconductor memory device with a unique structure involving bonding pads and insulating layers. Here is a simplified explanation of the patent application:
- The semiconductor memory device includes a first substrate with a peripheral circuit structure and a cell array structure.
- The cell array structure consists of a second substrate, a stack, insulating layers, dummy plugs, and bonding pads.
- The bonding pads in the peripheral circuit structure and the cell array structure are connected through the dummy plugs.
- The dummy plug is electrically connected to both sets of bonding pads and is in contact with the second insulating layer.
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- Potential Applications
The technology described in this patent application could be used in various electronic devices requiring high-density memory storage, such as smartphones, tablets, and computers.
- Problems Solved
This innovation addresses the challenge of increasing memory capacity in a limited space by utilizing a three-dimensional structure with efficient electrical connections between different layers.
- Benefits
The benefits of this technology include higher memory capacity, improved data transfer speeds, and potentially reduced power consumption due to optimized circuit design.
- Potential Commercial Applications
The innovative semiconductor memory device could be commercialized by semiconductor manufacturers for use in consumer electronics, data centers, and other applications requiring high-performance memory solutions.
- Possible Prior Art
One possible prior art for this technology could be the development of three-dimensional memory structures in the semiconductor industry, as well as advancements in bonding pad and insulating layer technologies.
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- Unanswered Questions
- How does this technology compare to traditional two-dimensional memory devices?
The article does not directly compare the performance or efficiency of this three-dimensional semiconductor memory device to traditional two-dimensional memory devices.
- What are the potential limitations or challenges in implementing this technology on a larger scale?
The article does not address any potential limitations or challenges that may arise when scaling up the production of this three-dimensional semiconductor memory device.
Original Abstract Submitted
A three-dimensional semiconductor memory device may include a first substrate, a peripheral circuit structure on the first substrate, the peripheral circuit structure including first bonding pads in an upper portion of the peripheral circuit structure, and a cell array structure on the peripheral circuit structure. The cell array structure may include a second substrate, a stack interposed between the peripheral circuit structure and the second substrate, a first insulating layer enclosing the stack, a dummy plug penetrating the first insulating layer, a second insulating layer on the dummy plug, and second bonding pads interposed between the stack and the peripheral circuit structure and connected to the dummy plug. The first bonding pads may contact the second bonding pads, and the dummy plug may be electrically connected to the first bonding pads and the second bonding pads. A top surface of the dummy plug may contact the second insulating layer.
