18186656. METHOD TO IMPROVE INTERCONNECT COEFFICIENT OF THERMAL EXPANSION simplified abstract (Applied Materials, Inc.)
Contents
METHOD TO IMPROVE INTERCONNECT COEFFICIENT OF THERMAL EXPANSION
Organization Name
Inventor(s)
Tyler Sherwood of Fonda NY (US)
Raghav Sreenivasan of Fremont CA (US)
METHOD TO IMPROVE INTERCONNECT COEFFICIENT OF THERMAL EXPANSION - A simplified explanation of the abstract
This abstract first appeared for US patent application 18186656 titled 'METHOD TO IMPROVE INTERCONNECT COEFFICIENT OF THERMAL EXPANSION
The present technology involves semiconductor processing methods and devices that enhance the expansion of bulk material in substrate features.
- Cleaning a substrate made of silicon oxide with defined features, including a liner extending across the silicon oxide and within the features, and a copper-containing layer deposited on the liner.
- Depositing a second metal with a coefficient of thermal expansion greater than 17 over the substrate.
- Diffusing the second metal into the copper-containing layer to form a copper alloy.
Potential Applications: - Advanced semiconductor manufacturing processes - High-performance electronic devices - Aerospace and automotive industries for thermal management solutions
Problems Solved: - Enhancing the expansion of bulk material in substrate features - Improving the reliability and performance of semiconductor devices
Benefits: - Increased efficiency in semiconductor processing - Enhanced thermal management capabilities - Improved overall device performance and reliability
Commercial Applications: Title: Advanced Semiconductor Processing Methods for Enhanced Thermal Management This technology can be utilized in the production of high-performance electronic devices, aerospace components, and automotive systems where thermal management is critical. The market implications include improved product reliability, efficiency, and performance.
Questions about the technology: 1. How does the diffusion of the second metal into the copper-containing layer improve the properties of the substrate features? 2. What are the specific advantages of using a second metal with a coefficient of thermal expansion greater than 17 in semiconductor processing?
Original Abstract Submitted
The present technology includes semiconductor processing methods and devices with improved expansion of the bulk material in substrate features. Methods include cleaning a substrate that is formed from silicon oxide and that defines one or more features and that includes a liner that extends across the silicon oxide and within one or more features and a copper-containing layer deposited on the liner and extending within the one or more features. Methods include depositing a second metal over the substrate, where the second metal has a coefficient of thermal expansion of greater than or about 17. Methods also include diffusing the second metal into the copper containing layer to form a copper alloy.
