18185611. SEMICONDUCTOR STRUCTURE simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.)

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SEMICONDUCTOR STRUCTURE

Organization Name

TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor(s)

Yu-Lung Tung of Kaohsiung City (TW)

Xiaodong Wang of Hsinchu City (TW)

Jhon-Jhy Liaw of Zhudong Township (TW)

SEMICONDUCTOR STRUCTURE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18185611 titled 'SEMICONDUCTOR STRUCTURE

The abstract of the patent application describes a semiconductor structure that includes a hybrid unit cell with different sub-cells containing gate-all-around (GAA) nanosheet transistors of varying heights and widths.

  • The semiconductor structure features a hybrid unit cell with at least one first sub-cell and one second sub-cell.
  • The first sub-cell contains a plurality of first GAA nanosheet transistors with a wider nanosheet width.
  • The second sub-cell includes a plurality of second GAA nanosheet transistors.
  • The first cell height is greater than the second cell height, indicating a layered structure with different transistor configurations.
  • This design allows for optimized performance and functionality in semiconductor devices.

Potential Applications: - Advanced semiconductor technology for electronic devices - High-performance computing systems - Next-generation mobile devices and smartphones

Problems Solved: - Enhancing transistor performance and efficiency - Improving semiconductor device capabilities - Meeting the demands of increasingly complex electronic systems

Benefits: - Increased speed and efficiency in electronic devices - Enhanced functionality and performance - Potential for smaller and more powerful devices

Commercial Applications: Title: Advanced Semiconductor Structures for Next-Generation Electronics This technology could be utilized in the development of cutting-edge electronic devices, leading to improved performance and capabilities in various industries such as telecommunications, computing, and consumer electronics.

Questions about Semiconductor Structures: 1. How does the hybrid unit cell design improve semiconductor device performance? The hybrid unit cell design allows for the integration of different types of nanosheet transistors, optimizing performance and functionality in semiconductor devices. 2. What are the potential implications of using GAA nanosheet transistors with varying widths in semiconductor structures? The use of GAA nanosheet transistors with varying widths can lead to enhanced device performance and efficiency, catering to the demands of advanced electronic systems.


Original Abstract Submitted

Semiconductor structures are provided. A semiconductor structure includes a hybrid unit cell. The hybrid unit cell includes at least one first sub-cell having a first cell height and at least one second sub-cell having a second cell height. The first sub-cell includes a plurality of first gate-all-around (GAA) nanosheet transistors. The second sub-cell includes a plurality of second GAA nanosheet transistors. The first cell height is higher than the second cell height, and the first GAA nanosheet transistor has a wider nanosheet width than the second GAA nanosheet transistor.

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