18184329. SEMICONDUCTOR STORAGE DEVICE simplified abstract (TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION)

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SEMICONDUCTOR STORAGE DEVICE

Organization Name

TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION

Inventor(s)

Tsuyoshi Midorikawa of Yokohama Kanagawa (JP)

SEMICONDUCTOR STORAGE DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18184329 titled 'SEMICONDUCTOR STORAGE DEVICE

Simplified Explanation

A semiconductor storage device described in the abstract includes a first memory circuit, a second memory circuit with a smaller storage capacity, a readout line connected to both memory circuits, a sense amplifier to compare voltage signals from each memory circuit, and a readout conditioning circuit to adjust operation timing and reference voltage based on the input signals.

  • The semiconductor storage device comprises a first memory circuit and a second memory circuit with different storage capacities.
  • A readout line is shared between the first and second memory circuits for data retrieval.
  • A sense amplifier compares voltage signals from the first and second memory circuits with a reference voltage.
  • A readout conditioning circuit adjusts the operation timing and reference voltage based on the input signals.

Potential Applications

The technology described in this patent application could be applied in:

  • Solid-state drives
  • Embedded systems
  • Mobile devices

Problems Solved

This technology addresses issues related to:

  • Efficient data storage and retrieval in semiconductor devices
  • Optimizing memory circuit performance
  • Enhancing overall system speed and reliability

Benefits

The benefits of this technology include:

  • Improved data access speeds
  • Enhanced memory management
  • Increased system efficiency

Potential Commercial Applications

The semiconductor storage device described in this patent application could find applications in:

  • Consumer electronics
  • Data centers
  • Automotive systems

Possible Prior Art

One possible prior art related to this technology is the use of sense amplifiers in memory circuits to enhance data retrieval speed and accuracy.

Unanswered Questions

1. How does the readout conditioning circuit precisely adjust the operation timing and reference voltage? 2. Are there any specific limitations or constraints in the implementation of this technology in different semiconductor devices?


Original Abstract Submitted

A semiconductor storage device according to an embodiment comprises: a first memory circuit; a second memory circuit having a storage capacity smaller than that of the first memory circuit; a readout line commonly connected to the first memory circuit and the second memory circuit; a sense amplifier configured to compare a voltage of a first bit signal or a second bit signal with a reference voltage, where the first bit signal being inputted from the first memory circuit through the readout line and the second bit signal being inputted from the second memory circuit through the readout line; and a readout conditioning circuit configured to change at least one of an operation timing of the sense amplifier and the reference voltage corresponding to the first bit signal and the second bit signal.