18180366. THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICES AND ELECTRONIC SYSTEMS INCLUDING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICES AND ELECTRONIC SYSTEMS INCLUDING THE SAME
Organization Name
Inventor(s)
THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICES AND ELECTRONIC SYSTEMS INCLUDING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18180366 titled 'THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICES AND ELECTRONIC SYSTEMS INCLUDING THE SAME
Simplified Explanation
The abstract describes a three-dimensional semiconductor memory device that includes a stacked structure with gate electrodes, a source structure, and a second substrate. The source structure consists of two conductive patterns, one between the second substrate and the stacked structure and the other on top of the first conductive pattern. The second conductive pattern has three parts: one between the first conductive pattern and the second substrate, a connection part passing through the second substrate, and a second part on the second substrate connected to the first part through the connection part.
- The semiconductor memory device has a three-dimensional structure with stacked gate electrodes and a source structure.
- The source structure includes two conductive patterns, providing a more efficient and compact design.
- The second conductive pattern has three parts, allowing for better connectivity and integration with the first conductive pattern and the second substrate.
Potential Applications
- This technology can be used in various electronic devices that require high-density memory storage, such as smartphones, tablets, and computers.
- It can also be applied in data centers and cloud computing facilities to enhance memory capacity and performance.
Problems Solved
- The three-dimensional structure of the semiconductor memory device solves the problem of limited memory capacity in traditional two-dimensional memory devices.
- The compact design and improved connectivity of the source structure address the challenges of increasing memory density while maintaining efficient operation.
Benefits
- The three-dimensional structure allows for higher memory capacity and performance compared to traditional memory devices.
- The compact design and improved connectivity result in a smaller footprint and more efficient use of space.
- The technology enables faster data access and processing, enhancing overall device performance.
Original Abstract Submitted
A three-dimensional semiconductor memory device includes a first substrate, a peripheral circuit structure on the first substrate, and a cell array structure on the peripheral circuit structure. The cell array structure includes a stacked structure including gate electrodes extending in a first direction, a source structure on the stacked structure, and a second substrate in contact with the source structure. The source structure includes a first source conductive pattern between the second substrate and the stacked structure and a second source conductive pattern on the first source conductive pattern. The second source conductive pattern includes a first source part between the first source conductive pattern and the second substrate, a source connection part passing through the second substrate and extending in the first direction, and a second source part on the second substrate and connected to the first source part through the source connection part.
