18180210. REFLECTIVE MASK AND METHOD OF DESIGNING ANTI-REFLECTION PATTERN OF THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
REFLECTIVE MASK AND METHOD OF DESIGNING ANTI-REFLECTION PATTERN OF THE SAME
Organization Name
Inventor(s)
Hyungjong Bae of Suwon-si (KR)
Hyun Jung Hwang of Suwon-si (KR)
Seong-Bo Shim of Suwon-si (KR)
Seungyoon Lee of Suwon-si (KR)
Woo-Yong Jung of Suwon-si (KR)
REFLECTIVE MASK AND METHOD OF DESIGNING ANTI-REFLECTION PATTERN OF THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18180210 titled 'REFLECTIVE MASK AND METHOD OF DESIGNING ANTI-REFLECTION PATTERN OF THE SAME
Simplified Explanation
The patent application describes a reflective mask used in an EUV exposure process. The mask consists of a substrate, a reflective layer, and an absorption layer. The mask has a main region, an out-of-band region, and an alignment mark region. The alignment mark region includes an alignment mark and an anti-reflection pattern with line-and-space patterns of a predetermined line width.
- The reflective mask is used in an EUV exposure process.
- It includes a substrate, a reflective layer, and an absorption layer.
- The mask has a main region, an out-of-band region, and an alignment mark region.
- The alignment mark region includes an alignment mark and an anti-reflection pattern.
- The anti-reflection pattern has line-and-space patterns with a predetermined line width.
Potential Applications:
- Semiconductor manufacturing
- Lithography processes
- Mask fabrication
Problems Solved:
- Improves alignment accuracy in EUV exposure processes
- Reduces reflection and interference effects
- Enhances the performance of lithography processes
Benefits:
- Higher precision in alignment during EUV exposure
- Improved image quality and resolution in lithography
- Enhanced efficiency and reliability in semiconductor manufacturing
Original Abstract Submitted
A reflective mask used in an EUV exposure process includes a mask substrate, a reflective layer on the mask substrate, and an absorption layer on the reflective layer. The reflective mask includes a main region, an out-of-band region surrounding the main region, and an alignment mark region outside a periphery of the out-of-band region. The absorption layer in the alignment mark region includes an alignment mark and an anti-reflection pattern adjacent the alignment mark, and the anti-reflection pattern includes line-and-space patterns having a predetermined line width in the alignment mark region.
