18178460. SEMICONDUCTOR STORAGE DEVICE simplified abstract (Kioxia Corporation)
Contents
- 1 SEMICONDUCTOR STORAGE DEVICE
SEMICONDUCTOR STORAGE DEVICE
Organization Name
Inventor(s)
Ryota Nihei of Yokkaichi Mie (JP)
SEMICONDUCTOR STORAGE DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18178460 titled 'SEMICONDUCTOR STORAGE DEVICE
Simplified Explanation
The semiconductor storage device described in the abstract consists of multiple layers and electrodes arranged in a specific configuration to enhance performance and functionality.
- The device has first and second gate electrodes extending in one direction.
- A first semiconductor layer is positioned between the first and second gate electrodes.
- A second semiconductor layer is also present between the first semiconductor layer and the second gate electrode, but it is separated from the first semiconductor layer.
- A third semiconductor layer is located between the first and second gate electrodes, with a gap separating it from the first semiconductor layer.
- Charge trapping layers are interspersed between the gate electrodes and semiconductor layers to improve charge retention and control.
Potential Applications
This technology could be applied in:
- Memory devices
- Flash storage
- Solid-state drives
Problems Solved
This innovation addresses issues related to:
- Charge retention
- Data storage reliability
- Semiconductor performance
Benefits
The benefits of this technology include:
- Enhanced data storage capacity
- Improved semiconductor device performance
- Increased reliability and longevity
Potential Commercial Applications
The potential commercial applications of this technology include:
- Consumer electronics
- Data centers
- Automotive electronics
Possible Prior Art
One possible prior art for this technology could be:
- Multi-layer semiconductor devices with charge trapping layers
Unanswered Questions
How does this technology compare to existing semiconductor storage devices in terms of performance and reliability?
This article does not provide a direct comparison with existing semiconductor storage devices, so it is unclear how this technology stacks up against current solutions. Further research and testing would be needed to determine the advantages and disadvantages of this innovation.
What are the manufacturing costs associated with implementing this technology in semiconductor devices?
The article does not delve into the specific manufacturing costs of this technology, leaving a gap in understanding the economic feasibility of widespread adoption. Conducting a cost analysis and comparing it to alternative solutions would be necessary to assess the financial implications of incorporating this innovation.
Original Abstract Submitted
According to one embodiment, a semiconductor storage device has first and second gate electrodes extending in one direction. A first semiconductor layer is between the first gate electrode and the second gate electrode. A second semiconductor layer is also between the first semiconductor layer and the second gate electrode but separated from the first semiconductor layer. A third semiconductor layer is between the first gate electrode and the second gate electrode but is spaced from the first semiconductor layer by a gap. A first charge trapping layer is between the first gate electrode and the first semiconductor layer. A second charge trapping layer is between the second gate electrode and the second semiconductor layer. A third charge trapping layer is between the first gate electrode and the third semiconductor layer.
