18177353. METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE simplified abstract (Kioxia Corporation)
Contents
- 1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Toshiyuki Sasaki of Yokkaichi Mie (JP)
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18177353 titled 'METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Simplified Explanation
The abstract describes a method for manufacturing a semiconductor device involving the use of a mask material containing a first metal with specific content percentages, and performing treatments at different temperatures and in different gas atmospheres.
- Explanation of the patent:
- Form a mask material with two layers, one with lower content of first metal and the other with equal or higher content. - Pattern the mask material for processing the to-be-processed film. - Perform a first treatment at a first temperature in a first gas atmosphere. - Perform a second treatment at a higher temperature in a different gas atmosphere.
Potential Applications
This technology can be applied in the manufacturing of various semiconductor devices, such as integrated circuits, sensors, and memory devices.
Problems Solved
This method helps in achieving precise patterning and processing of semiconductor films, leading to improved device performance and reliability.
Benefits
- Enhanced control over the manufacturing process - Increased efficiency and accuracy in semiconductor device production - Potential for higher quality and performance of the final products
Potential Commercial Applications
Optimizing Semiconductor Device Manufacturing Process for Improved Performance
Possible Prior Art
Prior art may include similar methods for patterning and processing semiconductor films using mask materials with specific metal content percentages.
Unanswered Questions
How does this method compare to existing semiconductor manufacturing techniques?
This method offers a unique approach to processing semiconductor films using a mask material with specific metal content percentages. It would be interesting to compare its efficiency and effectiveness with traditional methods.
What are the specific semiconductor devices that can benefit the most from this manufacturing method?
Different semiconductor devices may have varying requirements in terms of precision and performance. Understanding which devices can benefit the most from this method would provide valuable insights for its application in the industry.
Original Abstract Submitted
A method for manufacturing a semiconductor device includes forming, on a to-be-processed film above an underlying film, a mask material containing a first metal and comprising a first mask layer which is provided on the to-be-processed film and whose content of the first metal is lower than a first predetermined percentage, and a second mask layer which is provided on the first mask layer and whose content of the first metal is equal to or higher than the first predetermined percentage. The manufacturing method includes patterning the mask material. The manufacturing method includes processing the to-be-processed film using the mask material as a mask. The processing of the to-be-processed film includes performing a first treatment to process the to-be-processed film at a first temperature in an atmosphere of a first gas. The processing of the to-be-processed film includes performing a second treatment to process the to-be-processed film at a second temperature higher than the first temperature in an atmosphere of a second gas different from the first gas.
