18177063. SEMICONDUCTOR MEMORY DEVICE simplified abstract (Kioxia Corporation)

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SEMICONDUCTOR MEMORY DEVICE

Organization Name

Kioxia Corporation

Inventor(s)

Takehiro Nakai of Yokkaichi Mie (JP)

SEMICONDUCTOR MEMORY DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18177063 titled 'SEMICONDUCTOR MEMORY DEVICE

Simplified Explanation

The abstract describes a semiconductor memory device that includes various components such as a circuit region, a guard ring line, an element isolation region, and a dummy transistor.

  • The semiconductor memory device is built on a semiconductor substrate with a surface extending in the X and Y directions.
  • The circuit region is formed on the semiconductor substrate and has at least one side extending in the Y direction.
  • A guard ring line is present, extending along the Y direction and opposing one side of the circuit region in the X direction.
  • An element isolation region is formed between the one side of the circuit region and the guard ring line, extending along the Y direction.
  • A dummy transistor is placed on the upper surface of the element isolation region.
  • The dummy transistor consists of a main interconnection that extends in the Y direction and a branch interconnection that extends from the main interconnection in the X direction.

Potential applications of this technology:

  • Semiconductor memory devices are widely used in various electronic devices such as computers, smartphones, and tablets.
  • This innovation can improve the performance and efficiency of semiconductor memory devices, leading to better overall performance in electronic devices.

Problems solved by this technology:

  • The presence of the guard ring line and element isolation region helps in isolating and protecting the circuit region from external interference or noise.
  • The dummy transistor can assist in optimizing the layout and design of the semiconductor memory device, improving its overall functionality.

Benefits of this technology:

  • The guard ring line and element isolation region enhance the reliability and stability of the circuit region, reducing the chances of errors or malfunctions.
  • The dummy transistor aids in improving the performance and efficiency of the semiconductor memory device, resulting in faster data access and processing speeds.


Original Abstract Submitted

A semiconductor memory device includes: a semiconductor substrate having a surface extending in an X direction and a Y direction; a circuit region formed on the semiconductor substrate and having at least one side extending in the Y direction; a guard ring line extending along the Y direction and opposed to the one side of the circuit region in the X direction; an element isolation region extending along the Y direction and formed between the one side of the circuit region and the guard ring line; and a dummy transistor disposed on an upper surface of the element isolation region. The dummy transistor includes: a main interconnection extending in the Y direction; and a branch interconnection extending from the main interconnection in the X direction.

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