18176453. NITRIDE SEMICONDUCTOR DEVICE simplified abstract (KABUSHIKI KAISHA TOSHIBA)

NITRIDE SEMICONDUCTOR DEVICE

Organization Name

KABUSHIKI KAISHA TOSHIBA

Inventor(s)

Hung Hung of Kawasaki Kanagawa (JP)

Yasuhiro Isobe of Ota Tokyo (JP)

Akira Yoshioka of Yokohama Kanagawa (JP)

Toru Sugiyama of Musashino Tokyo (JP)

Hitoshi Kobayashi of Yamato Kanagawa (JP)

NITRIDE SEMICONDUCTOR DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18176453 titled 'NITRIDE SEMICONDUCTOR DEVICE

Simplified Explanation

The patent application describes a nitride semiconductor device with multiple semiconductor layers and electrodes, as well as insulating films separating them.

• The device includes a first semiconductor layer with a heterojunction, a second semiconductor layer with another heterojunction, a drain electrode, a source electrode, a gate electrode, and insulating films.
• The second semiconductor layer is separated from the gate electrode by a portion of the insulating film, with a shorter distance to the gate electrode compared to the drain electrode.

Potential Applications

The technology described in this patent application could be applied in the development of high-performance electronic devices, such as power amplifiers, high-frequency transistors, and sensors.

Problems Solved

This technology helps in improving the performance and efficiency of semiconductor devices by optimizing the layout and design of the various components, reducing parasitic capacitance and improving overall device performance.

Benefits

The benefits of this technology include enhanced device performance, increased efficiency, and improved reliability, leading to better overall functionality and longevity of semiconductor devices.

Potential Commercial Applications

The technology described in this patent application has potential commercial applications in the semiconductor industry, particularly in the development of advanced electronic devices for telecommunications, aerospace, and automotive industries.

Possible Prior Art

One possible prior art for this technology could be the development of similar semiconductor devices with multiple layers and electrodes, but with different configurations and materials. Research in the field of nitride semiconductors and heterojunction devices may also provide relevant prior art.

How does this technology compare to existing semiconductor devices in terms of performance and efficiency?

The article does not provide a direct comparison with existing semiconductor devices in terms of performance and efficiency. Further research or testing would be needed to determine the specific advantages of this technology over existing solutions.

What are the potential challenges or limitations of implementing this technology in practical applications?

The article does not address potential challenges or limitations of implementing this technology in practical applications. Factors such as manufacturing costs, scalability, and compatibility with existing technologies could be important considerations that are not covered in the patent application.

Original Abstract Submitted

According to one embodiment, a nitride semiconductor device includes a first semiconductor layer having a heterojunction, a second semiconductor layer on the first semiconductor layer and having another heterojunction, a drain electrode on the second semiconductor layer, a source electrode provided on the first semiconductor layer, a gate electrode provided on the first semiconductor layer between the drain electrode and the source electrode, and a first insulating film between the gate electrode and the drain electrode covering the first semiconductor layer and the second semiconductor layer. The second semiconductor layer being separated from the gate electrode by a portion of the insulating film. A distance from the second semiconductor layer to the gate electrode is shorter than a distance from the drain electrode to the gate electrode.