18174046. SEMICONDUCTOR STRUCTURE WITH HYBRID BONDING AND METHOD FOR MANUFACTURING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)

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SEMICONDUCTOR STRUCTURE WITH HYBRID BONDING AND METHOD FOR MANUFACTURING THE SAME

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor(s)

Wei-De Ho of Hsinchu (TW)

Wei-Xiang You of Hsinchu (TW)

Jui-Chien Huang of Hsinchu (TW)

Szuya Liao of Hsinchu (TW)

SEMICONDUCTOR STRUCTURE WITH HYBRID BONDING AND METHOD FOR MANUFACTURING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 18174046 titled 'SEMICONDUCTOR STRUCTURE WITH HYBRID BONDING AND METHOD FOR MANUFACTURING THE SAME

Simplified Explanation

The semiconductor structure consists of two device assemblies with substrates, main units, dielectric units, and electrically conductive routing. The dielectric units of the two assemblies are bonded together, allowing direct contact between the electrically conductive routing of each assembly.

  • The semiconductor structure includes two device assemblies with interconnected dielectric units.
  • Each device assembly has a substrate, main unit, dielectric unit, and electrically conductive routing.
  • The dielectric units of the two device assemblies are bonded together.
  • This bonding enables direct contact between the electrically conductive routing of each assembly.
  • The structure allows for efficient electrical connections between devices in the semiconductor.

Potential Applications

This technology can be applied in various semiconductor devices, such as integrated circuits, microprocessors, and memory chips. It can also be used in power electronics, sensors, and communication devices.

Problems Solved

This technology solves the problem of establishing reliable electrical connections between different device assemblies in a semiconductor structure. It ensures efficient signal transmission and reduces the risk of signal loss or interference.

Benefits

- Improved electrical connectivity - Enhanced signal transmission efficiency - Reduced risk of signal loss or interference - Increased reliability of semiconductor devices

Commercial Applications

Title: Advanced Semiconductor Interconnection Technology This technology can be commercially utilized in the semiconductor industry for manufacturing high-performance electronic devices. It can enhance the reliability and efficiency of semiconductor products, leading to improved performance and durability in various applications.

Prior Art

For prior art related to this technology, researchers can explore patents and publications in the field of semiconductor interconnection technologies, dielectric bonding methods, and device assembly techniques.

Frequently Updated Research

Researchers are continually exploring advancements in semiconductor interconnection technologies, dielectric materials, and device assembly processes to enhance the performance and reliability of semiconductor devices. Stay updated on the latest research in these areas to understand the evolving landscape of semiconductor technology.

Questions about Semiconductor Structure

How does the bonding of dielectric units improve the efficiency of electrical connections in the semiconductor structure?

The bonding of dielectric units ensures direct contact between the electrically conductive routing of each device assembly, enabling efficient signal transmission and reducing the risk of signal loss or interference.

What are the potential applications of this semiconductor structure technology beyond integrated circuits?

This technology can be applied in various semiconductor devices such as microprocessors, memory chips, power electronics, sensors, and communication devices, enhancing their performance and reliability.


Original Abstract Submitted

A semiconductor structure includes a first device assembly and a second device assembly. Each of the first and second device assembly includes a substrate, a main unit disposed on the substrate and including at least one device, a dielectric unit disposed on the main unit and having an interconnecting surface opposite to the substrate, and an electrically conductive routing disposed in the dielectric unit, electrically connected to the at least one device, and including an end portion. The interconnecting surface of the dielectric unit of the first device assembly is bonded to the interconnecting surface of the dielectric unit of the second device assembly such that the end portion of the electrically conductive routing of the first device assembly is in direct contact with the end portion of the electrically conductive routing of the second device assembly. A method for manufacturing the semiconductor structure are also disclosed.