18172595. 3D U-SHAPED NANOSHEET DEVICE simplified abstract (Tokyo Electron Limited)
Contents
3D U-SHAPED NANOSHEET DEVICE
Organization Name
Inventor(s)
H. Jim Fulford of Marianna FL (US)
Mark I. Gardner of Cedar Creek TX (US)
Partha Mukhopadhyay of Oviedo FL (US)
3D U-SHAPED NANOSHEET DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18172595 titled '3D U-SHAPED NANOSHEET DEVICE
The method described in the patent application involves fabricating a semiconductor device by forming a patterned stack of layers with lower and upper active layers for transistors, doping the source-drain portions of these layers, and creating source-drain connections.
- The patent introduces a novel approach of using dummy gates surrounding the gate portions of the active layers in the stack.
- The dummy gates are later replaced with a gate-all-around (GAA) structure to form the transistors.
- This innovation allows for the efficient fabrication of both lower and upper transistors in the semiconductor device.
Potential Applications: - This technology can be applied in the manufacturing of advanced semiconductor devices for various electronic applications. - It can enhance the performance and efficiency of integrated circuits in devices such as smartphones, computers, and other electronic gadgets.
Problems Solved: - The method addresses the challenge of fabricating multiple transistors in a semiconductor device stack efficiently. - It provides a solution for improving the overall performance and functionality of semiconductor devices.
Benefits: - Improved transistor performance and efficiency. - Enhanced functionality and reliability of semiconductor devices. - Cost-effective fabrication process for complex integrated circuits.
Commercial Applications: Title: Advanced Semiconductor Device Fabrication Method for Enhanced Performance This technology can be utilized in the production of high-performance electronic devices, leading to improved market competitiveness and consumer satisfaction.
Prior Art: Readers can explore prior research on semiconductor device fabrication methods, GAA structures, and transistor technology to gain a deeper understanding of the innovation presented in this patent application.
Frequently Updated Research: Stay updated on the latest advancements in semiconductor fabrication techniques, transistor design, and integrated circuit technology to further enhance the application of this innovative method.
Questions about Semiconductor Device Fabrication: 1. What are the key advantages of using a gate-all-around (GAA) structure in semiconductor device fabrication? - A gate-all-around structure provides better control over the transistor operation, leading to improved performance and efficiency. 2. How does the replacement of dummy gates with GAA structures impact the overall functionality of the semiconductor device? - The use of GAA structures enhances the transistor characteristics, resulting in better device performance and reliability.
Original Abstract Submitted
A method of fabricating a semiconductor device includes forming a patterned stack of layers including at least one lower active layer for forming a lower transistor and at least one upper active layer for forming an upper transistor stacked on the lower transistor. A dummy gate is formed surrounding a gate portion of each of the lower active layers and each of the upper active layers in the patterned stack, and the source-drain portions of the lower active layers and the upper active layers are doped. Source-drain connections to doped source-drain portions of the lower active layers and the upper active layers are formed. The dummy gate of the lower active layers and the upper active layers is replaced with a gate-all-around (GAA) structure to form the lower transistor and the upper transistor.
