18171167. SEMICONDUCTOR MEMORY STRUCTURE HAVING ENHANCED MEMORY WINDOW AND METHOD FOR MANUFACTURING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
Contents
- 1 SEMICONDUCTOR MEMORY STRUCTURE HAVING ENHANCED MEMORY WINDOW AND METHOD FOR MANUFACTURING THE SAME
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR MEMORY STRUCTURE HAVING ENHANCED MEMORY WINDOW AND METHOD FOR MANUFACTURING THE SAME - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
SEMICONDUCTOR MEMORY STRUCTURE HAVING ENHANCED MEMORY WINDOW AND METHOD FOR MANUFACTURING THE SAME
Organization Name
Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor(s)
Sai-Hooi Yeong of Hsinchu (TW)
SEMICONDUCTOR MEMORY STRUCTURE HAVING ENHANCED MEMORY WINDOW AND METHOD FOR MANUFACTURING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18171167 titled 'SEMICONDUCTOR MEMORY STRUCTURE HAVING ENHANCED MEMORY WINDOW AND METHOD FOR MANUFACTURING THE SAME
Simplified Explanation
The memory structure described in the abstract consists of memory cells arranged in an array, with each cell containing a memory region, word line portion, and multiple conductive blocks.
- Memory cells arranged in an array
- Memory region in each cell
- Word line portion on the first surface of the memory region
- First, second, and third conductive blocks on the second surface of the memory region
- Third conductive block positioned between and separated from the first and second conductive blocks
Potential Applications
The memory structure with multiple conductive blocks can be used in:
- High-density memory devices
- Non-volatile memory applications
- Embedded systems
Problems Solved
This technology helps in:
- Increasing memory density
- Enhancing memory performance
- Improving data retention
Benefits
The benefits of this technology include:
- Faster data access
- Lower power consumption
- Enhanced reliability
Potential Commercial Applications
The memory structure with multiple conductive blocks can be applied in:
- Solid-state drives (SSDs)
- Smartphones and tablets
- Wearable devices
Possible Prior Art
One possible prior art could be the use of multiple conductive blocks in memory cells to improve performance and reliability. However, specific details on prior art are not provided in the abstract.
Unanswered Questions
How does this memory structure compare to existing memory technologies in terms of speed and power consumption?
This article does not provide a direct comparison between this memory structure and existing technologies in terms of speed and power consumption. Further research or testing may be needed to determine the exact performance metrics.
What are the potential challenges or limitations of implementing this memory structure in practical applications?
The abstract does not mention any challenges or limitations associated with implementing this memory structure in practical applications. Additional studies or experiments may be required to identify and address any potential obstacles.
Original Abstract Submitted
A memory structure includes a plurality of memory cells arranged in an array. Each of the memory cells includes a memory region, a word line portion disposed on a first surface of the memory region, a first conductive block disposed on a second surface of the memory region opposite to the first surface, a second conductive block disposed on the second surface of the memory region, and a third conductive block disposed on the second surface of the memory region such that the third conductive block is disposed between and separated from the first conductive block and the second conductive block.
