18169928. STEPPED ISOLATION REGIONS simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
Contents
- 1 STEPPED ISOLATION REGIONS
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 STEPPED ISOLATION REGIONS - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Key Features and Innovation
- 1.6 Potential Applications
- 1.7 Problems Solved
- 1.8 Benefits
- 1.9 Commercial Applications
- 1.10 Questions about Stepped Isolation Regions
- 1.11 Original Abstract Submitted
STEPPED ISOLATION REGIONS
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Hui Hung Kuo of Kaohsiung (TW)
Hsin Heng Wang of Hsinchu (TW)
STEPPED ISOLATION REGIONS - A simplified explanation of the abstract
This abstract first appeared for US patent application 18169928 titled 'STEPPED ISOLATION REGIONS
Simplified Explanation
The patent application describes a method for creating device with stepped isolation regions by etching semiconductor material in layers.
- The method involves forming mask segments over the semiconductor material.
- Etching the semiconductor material to create first trenches with specific width and depth.
- Coating the first trenches with a material of lesser depth than the trenches.
- Performing an etch process to create second trenches over the first ones with different width and depth.
- Removing the coating from the first trenches.
Key Features and Innovation
- Formation of stepped isolation regions in semiconductor devices.
- Use of multiple etching processes to create different trench dimensions.
- Coating technique to control the depth of the trenches.
Potential Applications
The technology can be applied in semiconductor manufacturing for creating isolation regions in devices such as transistors, diodes, and integrated circuits.
Problems Solved
- Provides a method for creating stepped isolation regions in semiconductor devices.
- Allows for precise control over the dimensions of the isolation regions.
- Enhances the performance and reliability of semiconductor devices.
Benefits
- Improved isolation between components in semiconductor devices.
- Enhanced functionality and efficiency of the devices.
- Increased yield and quality in semiconductor manufacturing processes.
Commercial Applications
Stepped Isolation Regions in Semiconductor Devices
This technology can be utilized in the production of advanced semiconductor devices for various industries such as electronics, telecommunications, and automotive.
Questions about Stepped Isolation Regions
How does the coating technique help in controlling the depth of the trenches?
The coating material fills the first trenches partially, allowing for a more controlled etching process to create the second trenches with specific dimensions.
What are the potential benefits of using stepped isolation regions in semiconductor devices?
Stepped isolation regions help in reducing crosstalk between components, improving signal integrity, and enhancing the overall performance of the devices.
Original Abstract Submitted
Provided are device with stepped isolation regions and methods for fabricating the same. An exemplary method includes forming mask segments over a semiconductor material; etching the semiconductor material to form first trenches, wherein the first trenches have a first trench maximum width and a first trench depth; forming a coating in the first trenches, wherein the coating has a coating depth less than the first trench depth, and wherein uncovered portions of the semiconductor material extend from the coating to the patterned masks; performing an etch process to etch the mask segments and the uncovered portions of the semiconductor material to form second trenches over the first trenches, wherein the second trenches have a second minimum width greater than the first maximum width and a second depth less than the first depth; and removing the coating from the first trenches.
