18167741. SWITCHABLE SUBSTRATE FOR EXTREME ULTRAVIOLET OR E-BEAM METALLIC RESIST simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)

From WikiPatents
Jump to navigation Jump to search

SWITCHABLE SUBSTRATE FOR EXTREME ULTRAVIOLET OR E-BEAM METALLIC RESIST

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor(s)

An-Ren Zi of Hsinchu (TW)

Ching-Yu Chang of Hsinchu (TW)

SWITCHABLE SUBSTRATE FOR EXTREME ULTRAVIOLET OR E-BEAM METALLIC RESIST - A simplified explanation of the abstract

This abstract first appeared for US patent application 18167741 titled 'SWITCHABLE SUBSTRATE FOR EXTREME ULTRAVIOLET OR E-BEAM METALLIC RESIST

The method described in the patent application involves forming a semiconductor device by first creating a coating layer over a substrate using a switchable polymer and an acid generator.

  • The coating layer consists of a polymer backbone with pendant groups that include acid labile groups and crosslinking groups.
  • A baking process is then used to crosslink the crosslinking groups, resulting in a crosslinked coating layer.
  • A photoresist layer is deposited over the crosslinked coating layer, followed by selective exposure to patterning radiation.
  • The exposed layers are then developed to create a pattern of openings in both the photoresist layer and the crosslinked coating layer.

Potential Applications:

  • This method can be used in the manufacturing of various semiconductor devices, such as integrated circuits and microprocessors.

Problems Solved:

  • This method provides a way to create precise patterns in semiconductor devices, improving their performance and functionality.

Benefits:

  • The use of switchable polymers and crosslinking groups allows for more precise and controlled patterning in semiconductor devices.
  • The method offers a cost-effective and efficient way to manufacture semiconductor devices with complex patterns.

Commercial Applications:

  • This technology can be applied in the semiconductor industry for the production of advanced electronic devices with high precision and performance.

Questions about the technology: 1. How does the use of switchable polymers improve the patterning process in semiconductor devices? 2. What are the potential cost savings associated with this method compared to traditional patterning techniques?


Original Abstract Submitted

A method for forming a semiconductor device is provided. The method includes forming a coating layer over a substrate, the coating layer comprising a switchable polymer comprising a polymer backbone and pendant groups attached to the polymer backbone and an acid generator. The pendant groups include acid labile groups and crosslinking groups. A baking process is then performed to cause crosslinking of the crosslinking groups to form a crosslinked coating layer. Next, a photoresist layer is deposited over the crosslinked coating layer. After selectively exposing the photoresist layer and the crosslinked coating layer to a patterning radiation, the selectively exposed photoresist layer and the crosslinked coating layer are developed to form a pattern of openings in the photoresist layer and the crosslinked coating layer.