18167437. MEMORY CELL simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)

MEMORY CELL

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor(s)

Jhon-Jhy Liaw of Zhudong Township (TW)

MEMORY CELL - A simplified explanation of the abstract

This abstract first appeared for US patent application 18167437 titled 'MEMORY CELL

Simplified Explanation

The patent application describes memory cells with a unique structure, including first and second data storage cells and a match cell. The first data storage cell consists of a first pull-down transistor, a first pull-up transistor, and a first pass-gate transistor. The second data storage cell consists of a second pull-down transistor, a second pull-up transistor, and a second pass-gate transistor. The match cell includes a first data transistor and a second data transistor, each connected to their respective data storage cells.

• Memory cells with first and second data storage cells and a match cell
• Unique structure with specific transistors in each data storage cell and match cell
• Match cell positioned between the first and second data storage cells
• All cells have the same cell height for uniformity

Potential Applications

• Computer memory systems
• Integrated circuits
• Data storage devices

Problems Solved

• Efficient data storage and retrieval
• Improved memory cell performance
• Enhanced reliability and stability

Benefits

• Uniform cell height for consistent performance
• Enhanced data storage capacity
• Improved data access speed

Original Abstract Submitted

Memory cells are provided. A memory cell includes a first data storage cell, a second data storage cell and a match cell. The first data storage cell includes a first pull-down transistor, a first pull-up transistor and a first pass-gate transistor. The second data storage cell includes a second pull-down transistor, a second pull-up transistor, and a second pass-gate transistor. The match cell includes a first data transistor and a second data transistor. The first data transistor is electrically connected to the first pull-down transistor, the first pull-up transistor and the first pass-gate transistor. The second data transistor is electrically connected to the second pull-down transistor, the second pull-up transistor and the second pass-gate transistor. The first and second data storage cells and the match cell have the same cell height. The match cell is disposed between the first and second data storage cells.